Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

“…2(b) due to the fast sweep-out of free carriers in the re-established SCR region. At this point, the trapped electrons (nTc) in the SCR compensate part of the ionized donors [7,[24][25][26][27], so that the effective junction capacitance (CR) reduces after the end of the filling pulse [25] (3) where ND + is the ionized donor concentration, A is the diode active area, q is the elementary charge, and Vbi is the built-in voltage of the SBD. If the trapped electrons gain sufficient thermal energy (Ea > EC -ET), they are emitted from the trap level to the conduction band and subsequently swept out by the applied electric field.…”

“…Thermally stimulated capacitance (TSCAP) [24][25][26][27] spectroscopy measurements are performed to complement the DLTFS results. The carrier capture and emission kinetics are evaluated by conducting isothermal transient spectroscopy (ITS) [13] at a stabilized temperature.…”

Auxiliary Diagnostic Signal for Deep-Level Detection

“…Among the traditional methods for electrical analysis of these defect characteristics, Capacitance Deep Level Transient Spectroscopy (CDLTS) [1] is the best known. The principle of the CDLTS capturing or emitting charge carriers at deep levels has also been adopted in many ways to Optical DLTS [2][3][4][5], Photoinduced Current Transient Spectroscopy (PICTS) [6][7][8][9][10], Fourier Transform (FT)-DLTS [11][12][13], Laplace Transform (LT)-DLTS [14][15][16], Charge based (Q)-DLTS [17][18][19][20], etc., according to the measurement environment and sample conditions. However, the analysis methods mentioned above are typically performed over a very wide temperature range (e.g., (60-400) K) using very short temperature intervals (e.g., 1 K) over very long periods of time (e.g., several hours in some cases, and over 12 h in specific cases).…”