Comprehension of the effects of gamma ray on luminescence intensity of GaN-based light-emitting diodes with multi-quantum well

Changshi, Liu

doi:10.1134/s0030400x12080085

Cited by 2 publications

(6 citation statements)

References 6 publications

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“…This degradation after proton irradiation was caused by the trapping of carriers in proton irradiation-induced deep levels which may act as either radiative or non-radiative recombination centers. However, there was almost no increase in yellow-green emission, which is originated in GaN defect sites such as vacancies, impurities and deep levels, [173][174][175][176][177][178][179][180] after proton irradiation. The EL peak position before and after proton irradiations had no significant changes.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…172 Gamma ray damage.-The luminescence intensities of InGaN MQW LEDs (460 nm peak emission) irradiated by γ-rays decreased as the radiation dose becomes higher. 177 InGaN MQW LEDs in the form of unpackaged die with emission wavelengths from 410-510 nm were irradiated with Co 60 γ-rays with doses in the range 150-2000 Mrad (Si). The forward turn-on voltage for all the irradiated LEDs was increased slightly (by ∼0.1-0.15 V for 500 MRad dose irradiation) while the reverse breakdown voltage was unchanged within experimental error.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…176 Proton damage.-Displacement damage has a strong dependence on particle energy particularly for protons. [176][177][178][179][180][181][182][183][184][185][186] For energies below 30 MeV, protons interact with the nucleus through Rutherford scattering. Low-energy protons, which travel more slowly, transfer more energy than protons with higher energy due to their reduced velocity, increasing the cross section.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…As we discussed for the electronic devices, it has been experimentally shown that the displacement energy is inversely Q52 ECS Journal of Solid State Science and Technology, 5 (2) Q35-Q60 (2016) proportional to lattice constant. [172][173][174][175][176][177][178] The minority carrier lifetime, τ, in LEDs is sensitive to the presence of displacement damage and is related to the particle flux by…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

266

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

See 2 more Smart Citations

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

266

130

View full text Add to dashboard Cite

show abstract

“…Gamma ray Damage -The effert described in [46] shows that luminescity of the devices decreased as dosage increased. A .1 to .15 V shift in turnon voltage was observed.…”

Section: Radiation Damage In Gan Ledsmentioning

confidence: 99%

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

Pachol¹

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A Low-Powered Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs Matthew J. Pachol III-V semiconductor materials exhibit robustness and natural hardness when exposed to ionizing radiation and temperature swings. With these characteristics in mind, III-V Nitride Light Emitting Diodes (LEDs) are ideal devices for space-based applications and missions. The effects of ionizing radiation on optoelectronic devices comprised of III-V materials have been studied, but results have been obtained through experiments performed in terrestrial laboratories. While these laboratory tests may lend insight into device lifetimes, performance degradation, etc., they are no substitute for similar measurements and characterization performed in space. Interest in small satellite applications have grown over the past decade. These solutions range from Earth imaging to communication networks. Small satellites provide a unique opportunity to gain an understanding of the reliability and operational characteristics of III-V based materials and other semiconductor devices while exposed to the environment of space. To meet the constraints of the small satellite, a Low-powered Optoelectronic Characterizer for CubeSat (LOCC) has been developed in PC/104 form, measuring 3.6 by 3.8 inches. LOCC performs current-voltage and electroluminescent measurements of LEDs while in space. The LOCC system is designed using low-power integrated circuits that can supply over 100 mA of current to LEDs while maintaining low power of 3.2W under operation. This thesis presents the design, implementation, and control of the LOCC system. This includes system block diagrams, printed circuit board layouts, interfacing, firmware, and software. Additionally, the resulting current-voltage measurements, required wattage, and required data storage are presented to illustrate functionality. This instrumentation enables the study of optoelectronic devices in space, allowing future research to focus on producing radiation hard light emitting devices that can operate in environments with reduced shielding against ionizing radiation while maintaining device reliability.

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Comprehension of the effects of gamma ray on luminescence intensity of GaN-based light-emitting diodes with multi-quantum well

Cited by 2 publications

References 6 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

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