Compound semiconductor activation energy in humidity

The Design and Life Test of a Multifunction Power Amplifier for Space Application

“…With respect to humidity and hydrogen related degradation, the main signatures are the reduction of drain current, Freq (GHz) Figure 10: The insertion loss and isolation against frequency before (blue color traces) and after (red color traces) temperature stress. which leads to the reduction of output power, especially when the DUT is stressed with high temperature condition combined with humidity and hydrogen effects [25,26]. The possibility of humidity and hydrogen within the hermetic package could cause the adhesion phenomenon with respect to the passivation layer and the damage of the surface state of the semiconductor layer.…”

Hydrogen infiltration into BaTiO3-based dielectrics for multi-layer ceramic capacitors under highly accelerated temperature and humidity stress test

“…[8][9][10][11][12][13] In addition, a highly accelerated temperature and humidity stress test (HAST: 110°C-130°C, 85% RH, and 0.12-0.23 MPa) has been introduced as a reliability test conducted under high temperature, high humidity, and electric field bias. [14][15][16][17][18][19][20][21][22] In these test, the reason for the increased leakage current is explained as follows: water vapor infiltrates the MLCCs, and protons are generated by the electrolysis of H 2 O at the interface between the dielectrics and the internal electrode on the anode side. The protons then diffuse into the dielectrics, thereby increasing the leakage current.…”

Hydrogen migration in BaTiO3-based dielectrics under high humidity and electric field bias

“…This test evaluates the reliability in a short time. [14][15][16][17][18][19][20][21][22] However, the cause of an increased leakage current in the HAST had been not presumed, which was investigated. In our previous study, using model samples, the following hypothesis was proposed: first, water vapor infiltrates the MLCC.…”