2021
DOI: 10.1016/j.physb.2021.412890
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Compositional ratio effect on the physicochemical properties of SnSe thin films

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Cited by 10 publications
(6 citation statements)
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“…It was confirmed that the different compositional ratios of BTX TFs were successfully fabricated by adjusting the RF power on the Bi and Te targets as listed in Table 1. The differences in the two values (XPS vs. EDX) are likely ascribed to the TF surface region mainly contributing to the XPS signal while the bulk region mainly contributes to the EDX signal [22,23]. To elaborate, Te, which was predominately located in the bulk, would gradually proceed to relocate to the surface side as oxidation proceeded, resulting in a ratio difference compared to the bulk.…”
Section: Resultsmentioning
confidence: 99%
“…It was confirmed that the different compositional ratios of BTX TFs were successfully fabricated by adjusting the RF power on the Bi and Te targets as listed in Table 1. The differences in the two values (XPS vs. EDX) are likely ascribed to the TF surface region mainly contributing to the XPS signal while the bulk region mainly contributes to the EDX signal [22,23]. To elaborate, Te, which was predominately located in the bulk, would gradually proceed to relocate to the surface side as oxidation proceeded, resulting in a ratio difference compared to the bulk.…”
Section: Resultsmentioning
confidence: 99%
“…SEM (MIRA3, TESCAN, Czech) coupled with EDX (X‐max 50, Oxford Instruments, Abingdon, UK) and AFM (Dimension FastScan, Bruker, USA) were conducted to investigate the morphology and elemental composition of the TFs. The surface wettability and surface free energy of TFs were studied with distilled water (DW) and ethylene glycol (EG) to calculate the surface free energy (SFE) by using a homemade contact angle (CA) measurement system described elsewhere 27,29 . XRD (X'Pert 3 ‐Powder, Malvern Panalytical, UK) was performed to study the crystalline structure of the TFs using a Cu Kα source with 40.0 kV of acceleration voltage and 40.0 mA of filament current.…”
Section: Methodsmentioning
confidence: 99%
“…SnTe TFs were fabricated by depositing target materials on Si(100) substrates using a homemade RF magnetron cosputtering system. [25][26][27] Fabrication of TFs was performed in the cosputtering chamber. The base pressure of the cosputtering chamber was maintained at 2.4 Â 10 À2 Pa using two rotary pumps (RPs) and a turbo molecular pump (TMP).…”
Section: Fabrication Methods Of Tin Telluride Thin Filmsmentioning
confidence: 99%