Compositional grading in GaAsSb grown on GaAs substrates

Lin, Yu-Hsien; Chen, C.H.; Wu, Jiabin; Lee, C.P.

doi:10.1016/j.jcrysgro.2014.05.018

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…10,11 It was shown that a naturally formed Sb gradients exists in GaAsSb epitaxial layers grown by molecular beam epitaxy (MBE). 12 Moreover, a consistent self-induced Sb compositional gradients are also observed in GaAsSb nanowires grown by MBE, leading to a specific and reproducible rectifying behavior. 13 It means that the compositional non-uniformity in semiconductor alloys may strongly affect their optical and electrical properties.…”

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confidence: 79%

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Zhang

Qiu

Chen

et al. 2019

Applied Physics Letters

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Low-temperature photoluminescence (PL), photoreflectance (PR), and temperature dependent time-resolved PL spectroscopies are employed to investigate optical emission processes and exciton dynamics in graded GaAsSb epilayers. The nonuniformity in the Sb composition along the growth direction is disclosed from low-temperature PL and PR measurements. Furthermore, significant differences in PL dynamics are found at low temperatures for the PL emissions originating from spatial regions with the low and high Sb compositions, with a fast decay and a slow rise at the early stage of the PL transient, respectively. This finding is attributed to exciton transfer from the low Sb region to the high Sb region. The obtained results are important for a general understanding of optical transitions and exciton/carrier dynamics in material systems with graded alloy composition.

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confidence: 79%

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Zhang

Qiu

Chen

et al. 2019

Applied Physics Letters

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“…При этом GaAs является прозрачным в длинноволновой области ИК диапазона, что упрощает задачу совмещения эпитаксиальных структур с мультиплексорами. Большое рассогласование способствует быстрой релаксации упругих напряжений в растущей пленке твердого раствора уже на толщинах в несколько десятков нм [8] [9][10][11]. Подобное поведение приводит к несимметричной релаксации напряжений и в итоге служит причиной возникновения анизотропии электронного транспорта в метаморфных материалах, что отрицательно сказывается на характеристиках приборов [12,13].…”

Section: Introductionunclassified

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Емельянов¹,

Vasev²,

Семягин³

et al. 2019

Журнал Технической Физики

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The influence of substrate misorientation degree on the composition and morphology of layers during molecular-beam epitaxy of InAsxSb1−x solid solutions on the GaAs surface was studied. The GaAs wafers with orientation (001), which were miscuted in the [110] direction by 0, 1, 2 and 5◦, were used as substrates. The growth of heterostructures was performed for temperatures of 310◦C and 380◦C (lower and upper boundaries for the temperature range of structurally perfect InAsx Sb1−x films formation, respectively). The influence of the arsenic molecular form (As2 or As4) on the composition of layers was studied. Studies of composition and structural properties were carried out using high-resolution X-ray diffractometry (HRXRD) and atomic force microscopy (AFM). It was established that in the series of misorientation from 0 to 5◦ the arsenic fraction x increases consecutively with the use of both flux of As2 and flux of As4 molecules. When the flux of As2 molecules is used, the fraction x increases insignificantly (in 1.05 times) with a rise of misorientation degree, but when using As4 molecules, x increases in 1.75 times. The increase of the growth temperature leads to the rise of the arsenic fraction in the solid solution. The morphology of the surface improves during increasing of misorientation degree at a low growth temperature and degrades at high temperatures.

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Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

Chu

Sang

Liu

et al. 2021

Journal of Applied Physics

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High-quality lattice-matched and mismatched strained GaAs1−xSbx (0.37 < x < 0.57) sub-micrometer epilayers are grown on InP by molecular beam epitaxy. Based on a heat conduction model regarding the heat transfer process between the thin GaAsSb films and thick InP substrates, the corresponding thermal conductivity of GaAsSb epilayers was accurately extracted from the power and temperature micro-Raman measurement. Combined with time-domain thermoreflectance measurements, we found that in comparison to the lattice-matched sample with Sb = 47.7%, a significant reduction in thermal conductivity of the lattice-mismatched sample with Sb = 37.9% and Sb = 56.2% is observed. With the help of diffraction reciprocal space maps and temperature-dependent photoluminescence results, the reduction in thermal conductivity is attributed to lattice-mismatch-induced biaxial tensile and compressive strain that can cause the breakage of the cubic crystal symmetry and provoke more defects.

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Compositional grading in GaAsSb grown on GaAs substrates

Cited by 4 publications

References 8 publications

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

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