Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surface-emitting lasers

Pickrell, Gregory; Louderback, D.A.; Fish, M.A.; Hindi, J.J.; Lin, Hengwei; Simpson, M. Cather; Guilfoyle, Peter S.; Lear, K.L.

doi:10.1016/j.jcrysgro.2005.03.042

Cited by 17 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this first demonstration, we applied 16-nm-thick bandgap grading sections with five discrete Al (x) Ga (1-x) As layers of intermediate compositions to smoothen the energy band discontinuity at the heterojunction between AlAs and GaAs [33]. This results in precise layer thickness accuracy and close to a constant doping level over all layers within the bandgap grading sections.…”

Section: Wafer Growthmentioning

confidence: 99%

Electrically Pumped Vertical External Cavity Surface Emitting Lasers Suitable for Passive Modelocking

Barbarin

Hoffmann

Pallmann

et al. 2011

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Modelocked optically pumped vertical external cavity surface emitting lasers (VECSELs) have generated up to 6.4-W average power, which is higher than for any other semiconductor lasers. Electrical pumping of modelocked VECSELs is the next step toward a higher level of integration. With continuous wave (cw) electrically pumped (EP) VECSELs, an average output power of 900 mW has been demonstrated from the undisclosed proprietary novalux extended cavity surface emitting laser (NECSEL) design. In contrast, modelocked NECSELs have only been demonstrated at 40 mW. Recently, we presented a numerical study of EP-VECSELs suitable for modelocked operation; here, we demonstrate the first realization of this design. Power scaling is achieved with a lateral mode size increase. The competing electrical and optical requirements are, on the electrical side, low ohmic resistance, and on the optical side, low optical losses and low dispersion. Additionally, the device needs to operate in a fundamental mode for stable modelocking. We have fabricated and characterized 60 EP-VECSELs with varying dimensions and compared their lasing performance with our numerical simulations. The tradeoff between good beam quality and output power is discussed with an outlook to the modelocking of these EP-VECSELs. Initial EP-VECSEL devices have generated >100 mW of cw output power.

show abstract

Section: Wafer Growthmentioning

confidence: 99%

Electrically Pumped Vertical External Cavity Surface Emitting Lasers Suitable for Passive Modelocking

Barbarin

Hoffmann

Pallmann

et al. 2011

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…The VCSEL device structure is similar to that presented in [3] with minor modifications including optimization of distributed Bragg reflectors (DBRs) and strained InGaAs/GaAs active region to achieve overall good optical, electrical and thermal performance. The DC characteristics and modulation responses at room temperature and elevated temperatures of a typical device are shown in Fig.…”

Section: Device Structure and Performancementioning

confidence: 99%

High speed vertical cavity surface emitting lasers for harsh environment applications

Lanka

Louderback

Jin

et al. 2011

2011 IEEE Avionics, Fiber- Optics and Photonics Technology Conference

View full text Add to dashboard Cite

show abstract

“…The DBRs are requiring low resistance to allow current injection and reduce the carrier heating in quantum wells (QWs). When the level doping of the DBR is high, it causes a reduction in Fermi level and thus a decrease in potential barrier height (Pickrella et al, 2005) as well efficient in increasing the tunneling current. However, it is also related to higher internal optical losses due to the free carrier absorption.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers

Chaqmaqchee

2021

ARO

View full text Add to dashboard Cite

This paper presents an electrical analysis of various diameters of two p-types of GaAs/Al0.9Ga0.1As and two p-types of GaAs/Al0.3Ga0.7As/Al0.9Ga0.1As distributed Bragg reflectors (DBRs) mirrors structure grown on undoped and on p-doped GaAs, which affects the characteristics of 1300 nm vertical cavity surface emitting lasers (VCSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs). Electrical characterizations and Hall measurements of current−voltage (IV) for GaAs/Al0.9Ga0.1As linear DBRs and GaAs/Al0.3Ga0.7As/Al0.9Ga0.1 As graded DBRs were also performed at temperatures between 13 and 300 K. Consequently, p-type DBRs are designed with graded composition interfaces technique. The smaller mesa diameters are used to reduce vertical and longitudinal resistances and to limit the heating effect and improve the characteristics of VCSEL/VCSOA devices.

show abstract

Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surface-emitting lasers

Cited by 17 publications

References 12 publications

Electrically Pumped Vertical External Cavity Surface Emitting Lasers Suitable for Passive Modelocking

Electrically Pumped Vertical External Cavity Surface Emitting Lasers Suitable for Passive Modelocking

High speed vertical cavity surface emitting lasers for harsh environment applications

A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers

Contact Info

Product

Resources

About