Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy

Shportko, K.; Revutska, L.; Paiuk, O.; Baran, J.; Stronski, A.; Gubanova, A.; Venger, É. F.

doi:10.1016/j.optmat.2017.08.042

Cited by 32 publications

(17 citation statements)

References 34 publications

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“…These findings are in the agreement with theoretical and experimental data shown in 3,14 . The amorphous phase of GSTs is characterized by locally ordered motifs 10 , and long-range disorder with the volume expansion of 6% compared with the crystalline phases 14 . Altogether visually recognizable changes in the ε 2 (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…4, exhibit the similar pattern. In the previous work 10 we analyzed the compositional dependencies in the intensities of bands in Raman spectra of amorphous (GeTe) x (Sb 2 Te 3 ) 1−x samples. After the Gaussian decomposition procedure 38 , we focus on the evolution of the halfwidth FWHM in Raman spectra amorphous (GeTe) x (Sb 2 Te 3 ) 1−x samples.…”

Section: Resultsmentioning

confidence: 99%

“…4, Inset) results from the shortening of lifetime of Raman-active phonons caused by their increasing scattering due to the increasing imperfectness of the material.

Figure 4Raman spectra of amorphous (GeTe) x (Sb 2 Te 3 ) 1−x samples: () Ge 1 Sb 2 Te 4 , () Ge 2 Sb 2 Te 5 , () Ge 3 Sb 2 Te 6 , () GeTe 10 . Dashed lines correspond to Gaussian decomposition of Raman spectrum of amorphous Ge 1 Sb 2 Te 4 with positions of Gaussians marked 10 . Inset: The compositional increase of the average halfwidth < FWHM > in studied amorphous (GeTe) x (Sb 2 Te 3 ) 1−x samples.…”

Section: Resultsmentioning

confidence: 99%

“…In the recent work 10 , we studied the compositional dependences in the vibrational properties of amorphous GSTs using Raman spectroscopy at ambient temperature. It was found that the systematic compositional dependences in the intensities of characteristic Raman bands correlate with evolution of the concentration of different structural units present in (GeTe) x (Sb 2 Te 3 ) 1−x alloys.…”

Section: Introductionmentioning

confidence: 99%

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Disorder and compositional dependences in Urbach-Martienssen tails in amorphous (GeTe)x(Sb2Te3)1−x alloys

Shportko

2019

Sci Rep

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This work focuses on the compositional dependences in parameters that govern the optical properties of (GeTe) x (Sb 2 Te 3 ) 1−x amorphous alloys in the wide spectral range from above the phonons and to the inter-band electronic transitions. We studied the absorption edge fluctuations that are linked to the variations of the bandgap E g , the width of Urbach-Martienssen tails E U , the Tauc parameter B 1/ 2 , and average halfwidth < FWHM > of Raman bands in amorphous (GeTe) x (Sb 2 Te 3 ) 1−x alloys at various temperatures. Obtained results reveal the compositional trends in the influence of the disordering on the absorption processes in studied alloys.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…4, Inset) results from the shortening of lifetime of Raman-active phonons caused by their increasing scattering due to the increasing imperfectness of the material.

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Disorder and compositional dependences in Urbach-Martienssen tails in amorphous (GeTe)x(Sb2Te3)1−x alloys

Shportko

2019

Sci Rep

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“…Ge-As-Se systems showed the formation of different surface reliefs, mass transport or interaction between induced charges [11,12]. Geometric parameters and shape of the reliefs depend on the chemical composition of the film.…”

Section: Investigations Of Electron Beam Exposure Onmentioning

confidence: 99%

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Revutska¹,

Shylenko²,

Stronski³

et al. 2020

KPI SN

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Background. Chalcogenide glasses comprise a unique materials platform and are attractive in view of various applications that make use their intriguing characteristic, the ability to form surface-relief patterns. The interaction of these materials with the electron beam is of interest due to diversity of physical phenomena induced in chalcogenide films by laser irradiation. Objective. The purpose of the paper is to study direct (without selective etching) surface relief formation of optical elements periodic nanostructures on thermal vacuum evaporated film As3S77Ge20 of ∼8.3 μm thickness using electron beam lithography, as well as investigate the changes in surface nanostructures height and shape depending on exposure. Methods. The chemical composition was determined by energy dispersive analysis of X-rays. The film was irradiated by an electron beam using a scanning electron microscope. The influence of electron beam irradiation on As3S77Ge20 amorphous chalcogenide thin film was investigated. Surface relief of the film was tapped by atomic force microscope. Results. The exposure dose G varied from 12 mC•cm −2 to 12 C•cm −2. The formation of cones with Gaussian profile on the surfaces of the films was detected after local electron irradiation. Exposition dependent evolution of height surface nanostructures has been detected. It can be seen that for G < 2400 mC•cm −2 the height of the surface relief gradually grows to 100-125 nm and for G > 2400 mC•cm −2 , relief height decreases. The initial and inversion doses of relief formation on this film have found. For 6,6 μm pitch is equal to G0 = 9,60 mC•cm-2 , and the inversion dose of the surface relief shape G1= 31.18 C•cm −2. At d = 10 μm, these parameters are G 0 = 6,98 mC•cm −2 and G1 = 36.19 C•cm −2. The dependences () h = F G at increasing interval (16 mC•cm −2-1200 mC•cm −2) for d = 6.6 μm and d = 10 μm were fitted by exponential function. Conclusions. The changing of shape and parameters of the obtained surface relief on As3S77Ge20 film can be explained by the charge model. Our investigations have demonstrated that studied As3S77Ge20 composition is suitable for e-beam recording. These results show that As3S77Ge20 films can be used for fabrication of the optical elements.

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Vibrational Properties of Ge-Sb-Te Phase-Change Alloys Studied by Temperature-Dependent IR and Raman Spectroscopy

Shportko

Wuttig

2018

NATO Science for Peace and Security Series B: Physics and Biophysics

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Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy

Cited by 32 publications

References 34 publications

Disorder and compositional dependences in Urbach-Martienssen tails in amorphous (GeTe)x(Sb2Te3)1−x alloys

Disorder and compositional dependences in Urbach-Martienssen tails in amorphous (GeTe)x(Sb2Te3)1−x alloys

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Vibrational Properties of Ge-Sb-Te Phase-Change Alloys Studied by Temperature-Dependent IR and Raman Spectroscopy

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