Compositional dependence of AlAsySb1−y ternaries on the ratio of Sb/As fluxes and on the substrate temperature

Abstract

We present a systematic study of the compositional dependence of AlAsySb1−y layers, grown by molecular beam epitaxy, on the ratio of As to Sb fluxes and on the substrate temperature. The initial results clearly demonstrate that variations in the composition can be observed by changing the above-mentioned parameters. The emphasis of this communication is on understanding the qualitative trends of these dependencies.

Arsenic cross-contamination in GaSb/InAs superlattices

“…The results, seen in corresponding to an uncertainty in the strain of AE1 Â 10 À4 . This is the limit of precision we would expect to obtain with the present technique and presumably results from variations in the substrate temperature and the As flux [8]. The strain is varied over a range of $ 3 Â 10 À3 .…”

“…Naval Research Laboratory,4555 Overlook Avenue SW,Washington,DC,20375 8. PERFORMING ORGANIZATION REPORT NUMBER…”

Calculation of phase diagrams in AlxIn1−xAs/InP, AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

“…It is seen that the strain energy heighten the energy curve on both sides of the LMC, while, the surface energy raises the whole energy curve. Table 1 Surface reconstruction and reconstruction parameter (a) for ternary alloys [16][17][18].…”

On the determination of the structural parameters of GaxIn1−xAs/AlAsySb1−y superlattices by X-ray diffraction

“…In turn, there are several difficulties inherent to the growth of Ga x In 1Àx As/AlAs y Sb 1Ày SLs. The most important one is that As and Sb atoms have a complex and interdependent incorporation behaviour [10][11][12][13][14]. As a consequence, the compositional control of AlAsSb via the growth parameters is rather tricky [15,16].…”