Compositional and Deposition Rate Dependence upon RF Substrate Bias of RF Sputtered Ni-Fe Films

Abstract

82% Ni-Fe films have been prepared using Radio frequency (R.F) sputtered, R.F induced substrate bias. The results presented are of study of sputter films deposition at various RF substrate bias conditions so that suitable sputtering rate with optimum (target) composition could be determined for magnetoresistive sensing applications. Films have been sputtered with substrate temperature of 200° C, sputter gas (argon) pressure of 10mTorr with film thicknesses near 1000 °A. Substrate bias potential in the range 0 V to -400 V is varied in order to determine its dependence upon film composition and deposition rate. The result presented indicates the strong bias dependence upon film composition and deposition rate with most useful films for the application in concern could be produced at substrate bias potential in the range of -80 V to -120 V.