Composition determination of β-(AlxGa1−
 x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction

Oshima, Yuki; Ahmadi, Elaheh; Bădescu, Ştefan C.; Wu, Feng; Speck, James S.

doi:10.7567/apex.9.061102

Cited by 100 publications

(72 citation statements)

References 20 publications

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“…We note that this orientation has been already discussed in Ref. . One in‐plane direction is the x ‐direction and

ε_{xx} = \frac{a_{S}}{a_{F}} - 1 .

…”

Section: Biaxial Strainsupporting

confidence: 59%

“…Previously, the general problem has been treated but evaluated only for simple interface directions. We note that (100)

β

’(

{In}_{x} {Ga}_{1 - x}

) 2 O 3 /Ga 2 O 3 and (010)

β

’(

{Al}_{x} {Ga}_{1 - x}

) 2 O 3 /Ga 2 O 3 heterostructures have already been experimentally realized. The symbolic and numerical calculations of this work have been made with Mathematica .…”

Section: Introductionmentioning

confidence: 77%

“…We note that the formula for the shear strain is equivalent to the one given for

e_{5}

in Ref. previously.…”

Section: Biaxial Strainmentioning

confidence: 99%

“…The stress-strain relation for monoclinic Ga 2 O 3 has been calculated in Refs. [27,34]. In the Voigt notation, it reads ⎛…”

Section: Papermentioning

confidence: 99%

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Strain in pseudomorphic monoclinic Ga₂O₃‐based heterostructures

Grundmann

2017

Physica Status Solidi (b)

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We calculate analytically, the epitaxial in‐plane and out‐of‐plane strains for pseudomorphic growth of monoclinic heterostructures for various substrate orientations, namely the (010) plane and all (h0l) planes, parametrized by the rotation angle θ against the (001) plane. Numerical examples are given for the sesquioxide semiconductor systems (In0.1Ga0.9)2O3/Ga2O3 (the alloy being under compressive strain) and (Al0.1Ga0.9)2O3/Ga2O3 (tensile strain). Also, we calculate the strain energy density of the epilayer. By setting the monoclinic angle of the unit cell to π/2, our theory applies also to the simpler case of orthorhombic heterostructures. Elastic strain energy (relative units) of pseudomorphic monoclinic (In,Ga)2O3 (blue) and (Al,Ga)2O3 films (red) on β‐Ga2O3 as a function of the angle θ in the (010) azimuth

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“…We note that this orientation has been already discussed in Ref. . One in‐plane direction is the x ‐direction and

ε_{xx} = \frac{a_{S}}{a_{F}} - 1 .

…”

Section: Biaxial Strainsupporting

confidence: 59%

“…Previously, the general problem has been treated but evaluated only for simple interface directions. We note that (100)

β

’(

{In}_{x} {Ga}_{1 - x}

) 2 O 3 /Ga 2 O 3 and (010)

β

’(

{Al}_{x} {Ga}_{1 - x}

) 2 O 3 /Ga 2 O 3 heterostructures have already been experimentally realized. The symbolic and numerical calculations of this work have been made with Mathematica .…”

Section: Introductionmentioning

confidence: 77%

See 2 more Smart Citations

Strain in pseudomorphic monoclinic Ga₂O₃‐based heterostructures

Grundmann

2017

Physica Status Solidi (b)

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“…Компоненты данного тензора не сильно отличаются от результатов расчета в рам-ках приближения локальной плотности с использова-нием присоединенных плоских волн [21]. Вычисление матрицы, обратной к (2), дает коэффициенты тензора податливости, выраженные в GPa …”

Section: квантово-химическое моделирование упругопластических свойствunclassified

Исследование анизотропных упругопластических свойств пленок beta-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, синтезированных на подложках SiC/Si

Гращенко¹,

Кукушкин²,

Николаев³

et al. 2018

Физика Твердого Тела

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The structural and mechanical properties of gallium oxide films grown on silicon crystallographic planes (001), (011), and (111) with a buffer layer of silicon carbide are investigated. Nanoindentation was used to study the elastoplastic properties of gallium oxide and also to determine the elastic recovery parameter of the films under study. The tensile strength, hardness, elasticity tensor, compliance tensor, Young’s modulus, Poisson’s ratio, and other characteristics of gallium oxide were calculated using quantum chemistry methods. It was found that the gallium oxide crystal is auxetic because, for some stretching directions, the Poisson’s ratio takes on negative values. The calculated values correspond quantitatively to the experimental data. It is concluded that the elastoplastic properties of gallium oxide films approximately correspond to the properties of bulk crystals and that a change in the orientation of the silicon surface leads to a significant change in the orientation of gallium oxide.

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Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Liu,

Li,

Cheng

et al. 2024

Advanced Optical Materials

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Bandgap engineering in monoclinic gallium oxide (β‐Ga2O3) is a powerful strategy for designing semiconductor optoelectronic devices with specific functionalities. In this work, aluminum doping is utilized to modulate the bandgap of Ga2O3. By growing epitaxial β‐(AlxGa1‐x)2O3 (0≤ x≤ 0.84) films on c‐plane sapphire substrates using RF magnetron sputtering, it allowed to tune the energy bandgap, achieving values as high as 6.10 eV. The increased luminescence intensity is attributed to the recombination between donor and acceptor transitions induced by Al doping, resulting in more defects. Additionally, the luminescent band experienced blueshifts due to the enhanced bandgaps. Moreover, density of functional theory (DFT) simulations confirmed the sensitivity of the bandgap to Al content, distinguishing between Ga‐dominated (x < 0.5) and Al‐dominated (x > 0.5) β‐(AlxGa1‐x)2O3. Notably, the bandgap increased more rapidly in Ga‐dominated structures compared to Al‐dominated ones. The electronic structure analysis revealed a redistribution of Ga d states from valence to conduction bands, attributed to the introduction of numerous Al p states. These combined experimental and detailed electronic structure investigations proved crucial insights for designing the structure and exploring potential applications of β‐(AlxGa1‐x)2O3 in photonic devices.

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Composition determination of β-(Al_xGa₁₋ _x)₂O₃ layers coherently grown on (010) β-Ga₂O₃ substrates by high-resolution X-ray diffraction

Cited by 100 publications

References 20 publications

Strain in pseudomorphic monoclinic Ga₂O₃‐based heterostructures

Strain in pseudomorphic monoclinic Ga₂O₃‐based heterostructures

Исследование анизотропных упругопластических свойств пленок beta-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, синтезированных на подложках SiC/Si

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

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Composition determination of β-(AlxGa1− x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction

Cited by 100 publications

References 20 publications

Strain in pseudomorphic monoclinic Ga2O3‐based heterostructures

Strain in pseudomorphic monoclinic Ga2O3‐based heterostructures

Исследование анизотропных упругопластических свойств пленок beta-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, синтезированных на подложках SiC/Si

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

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Product

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Composition determination of β-(Al_xGa₁₋ _x)₂O₃ layers coherently grown on (010) β-Ga₂O₃ substrates by high-resolution X-ray diffraction

Strain in pseudomorphic monoclinic Ga₂O₃‐based heterostructures

Strain in pseudomorphic monoclinic Ga₂O₃‐based heterostructures

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices