Composition dependent metal-semiconductor transition in transparent and conductive La-doped BaSnO3 epitaxial films

Abstract

Articles you may be interested inDopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3 APL Mat. 2, 056107 (2014); 10.1063/1.4874895 Infrared-optical spectroscopy of transparent conducting perovskite (La,Ba)SnO3 thin films Appl. Phys. Lett.

Structural, electrical, and luminescence characteristics of vacuum-annealed epitaxial (Ba,La)SnO3 thin films

“…La doping in semiconducting BSO (La 3+ ions substituted for Ba 2+ ) induces conductivity, transforming La-doped BSO (LBSO) into a transparent conducting oxide material. [13][14][15][16][17] In BSO, Ba 2+ ion is coordinated to 12 O 2− ions whereas Sn 4+ ion is coordinated to 6 O 2− ions, [11] as illustrated in Fig. 1(a).…”

Tuning optical properties of transparent conducting barium stannate by dimensional reduction

“…[4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] Importantly, recent studies of high mobility La doped BaSnO 3 transparent conducting films show transport properties that are still dominated by extrinsic defects, specifically dislocations. 12,18,19 The implication is that there remains considerable room for even better conductivity with improvements in film perfection.…”

Structural, electrical and optical properties of lanthanum-doped barium stannate

“…In contrast to metallic behaviors of La-doped BaSnO 3 single-crystal and thin film, obvious semiconductor-like behavior is observed in BLS0.03 and BLS0.07 samples, suggesting that the scattering from grain boundaries is dominant for resistivity, analogous to the other reports [8,12]. Generally, Arhenius-type thermally activated conduction and variable-range hopping (VRH) model were usually utilized to understand the nature of transport in semiconductor phase of Ba 1 À x La x SnO 3 system [8,12,18]. In the present case, we carefully examined the two mechanisms and found that VRH is the dominant conduction mechanism.…”

“…In order to improve the electrical property of BaSnO 3 , both Ba and Sn sites were doped to form compounds, such as in singlecrystal, polycrystalline or thin-film forms [10][11][12][13][14][15][16][17][18]. Compared to the low carrier mobility in La or Sb-doped polycrystalline or epitaxially grown BaSnO 3 samples, a high Hall mobility of $ 103 cm 2 V À 1 s À 1 was recently observed in La-doped BaSnO 3 single-crystal by Luo et al [10] and subsequently the highest value of $ 320 cm 2 V À 1 s À 1 was reported by Kim et al [11].…”