Composition dependence of the work function of Ta1−xAlxNy metal gates

Alshareef, Husam N.; Choi, Kiho; Wen, Huang-Chun; Luan, H.F.; Harris, H. R.; Senzaki, Yoshihide; Majhi, P.; Lee, B. H.; Jammy, R.; Aguirre-Tostado, S.; Gnade, Bruce E.; Wallace, Robert M.

doi:10.1063/1.2174836

Cited by 40 publications

(23 citation statements)

References 2 publications

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“…Overall, our results summarized in table VI are in a qualitative agreement with the recent experiments [6][7][8][9][10][11][12][13][14][15][16][17], and we need to identify the microscopic mechanism of the doping effect.…”

Section: Band Alignment and Charge Transfersupporting

confidence: 78%

“…In particular, group III metals have been suggested to modify the interfacial dipole. For example, La has been used for the n-type silicon field effect transistors (FETs) [6,[8][9][10][11] and Al for the p-type FETs [7,[12][13][14][15][16][17]. The doping can be achieved, for instance, via the ion diffusion from a thin metal oxide capping layer deposited on top of the HfO 2 -based dielectric.…”

Section: Introductionmentioning

confidence: 99%

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Band alignment at the SiO2/HfO2interface: Group IIIA versus group IIIB metal dopants

Luo

Bersuker²,

Demkov

2011

Phys. Rev. B

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Abstract:Using density functional theory we examine the effect of Al and La incorporation on the electronic properties of the interface in the SiO 2 /HfO 2 high-k gate stacks recently introduced into the advanced modern field effect transistors. We show that La and Al doping have opposite effects on the band alignment at the SiO 2 /HfO 2 interface: while the Al ions, which substitute preferentially for Si in the SiO 2 layer, promote higher effective work function (EWF) values, the substitution of La for Hf decreases EWF. The analysis of the electronic structure of the doped interface suggests a simple relation between the electronegativity of the doping metal, screening properties of the interfacial layer and the band offset, which allows predicting qualitatively the effect of the high-k gate stack doping with a variety of metals on its EWF.

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Section: Band Alignment and Charge Transfersupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Band alignment at the SiO2/HfO2interface: Group IIIA versus group IIIB metal dopants

Luo

Bersuker²,

Demkov

2011

Phys. Rev. B

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“…70 The Ta 1Àx Al x N y system is an ideal combinatorial materials science problem because systematic measurement of U m across the wide composition range, x, is not trivial, since capacitor fabrication and characterization based on a "one-composition-at-a-time" approach are extremely time consuming; thus very little data are available for this metal gate alloy system. 72 Recently, a combinatorial approach was applied to U m extraction for the metal gate electrode system Ta 1Àx Al x N y deposited on HfO 2 . 49 Over two thousand capacitors on four identical metal gate libraries (albeit with differing capacitance due to SiO 2 underlayers of different thicknesses) were automatically measured, from which V fb shifts were extracted and U m determined.…”

Section: Advanced Gate Stack Materialsmentioning

confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

224

189

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High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a "library" sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same "library" sample, they can be highly uniform with respect to fixed processing parameters. This article critically reviews the literature pertaining to applications of combinatorial materials science for electronic, magnetic, optical, and energy-related materials. It is expected that high throughput methodologies will facilitate commercialization of novel materials for these critically important applications. Despite the overwhelming evidence presented in this paper that high throughput studies can effectively inform commercial practice, in our perception, it remains an underutilized research and development tool. Part of this perception may be due to the inaccessibility of proprietary industrial research and development practices, but clearly the initial cost and availability of high throughput laboratory equipment plays a role. Combinatorial materials science has traditionally been focused on materials discovery, screening, and optimization to combat the extremely high cost and long development times for new materials and their introduction into commerce. Going forward, combinatorial materials science will also be driven by other needs such as materials substitution and experimental verification of materials properties predicted by modeling and simulation, which have recently received much attention with the advent of the Materials Genome Initiative. Thus, the challenge for combinatorial methodology will be the effective coupling of synthesis, characterization and theory, and the ability to rapidly manage large amounts of data in a variety of formats. V C 2013 AIP Publishing LLC. [http://dx

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“…The three key points for selection of gate electrode materials are work function, thermal stability, and lower resistivity. So far, many types of materials have been investigated to replace poly-silicon, such as pure metals [2][3][4][5][6], binary alloys [7][8][9][10], metal nitrides [11][12][13][14][15], metal carbides [16], and fully silicided Si (FUSI) [17][18][19][20]. Of these, the refractory transition metal nitrides are of interest owing to their good thermal stability, good oxygen diffusion barrier characteristics, and tunable work function.…”

Section: Introductionmentioning

confidence: 99%