Composition dependence of photoconductivity in a-Se100−xTex

Misra, R.; Goel, S.; Tripathi, S. K.; Agnihotri, Arun Kumar; Кумар, Ашок

doi:10.1016/0921-4526(90)90351-t

Cited by 18 publications

(6 citation statements)

References 9 publications

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“…The present paper reports the effect of Sb additive on the dark and photoconductivity in vacuum evaporated thin films of glassy Se 85 Te 15 . At this composition, the density of states is maximum and defect state density is minimum [9]. The additive has been incorporated in the melt during the preparation of the glassy alloys.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sb additive on the electrical properties of Se–Te alloy

Thakur

Saini

Goyal

et al. 2005

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Effect of Sb additive on the electrical properties of Se–Te alloy

Thakur

Saini

Goyal

et al. 2005

Journal of Non-Crystalline Solids

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“…The present paper reports the effect of In additive on the dark and photoconductivities in vacuum evaporated thin film of glassy Se 85 Te 15 . At this composition, the density of states is maximum and the defect state density is minimum [10][11][12].…”

Section: Introductionmentioning

confidence: 95%

Effect of In additive on the electrical properties of Se–Te alloy

Sharma¹,

Thakur²,

Goyal³

et al. 2004

Semicond. Sci. Technol.

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Electrical measurements are done on Se 85−x Te 15 In x (x = 0, 2, 4, 6 and 10 at%) thin films. The dark conductivity (σ d ) increases and the activation energy ( E d ) decreases as the In concentration increases. The photoconductivity (σ ph ) also increases with the increase in In concentration. The photosensitivity (σ ph /σ d ) decreases sharply after the In incorporation. The charge carrier concentration (n σ ) is calculated with the help of dc conductivity measurements. The value of n σ increases as the In concentration increases. The results are explained on the basis of an increase in the density of localized states present in the mobility gap.

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“…Glassy alloys of SevoTes0_xSb~ (x=0, 2,4,6,8,10) were prepared by a quenching technique. Materials (99.999% pure) were weighed according to their atomic percentage and were sealed in quartz ampules (length 5 cm, internal diameter 8 mm) in a vacuum -10 -5 Torr.…”

Section: -Experimentalmentioning

confidence: 99%

“…The photoconductivity properties of these alloys have been studied by us and it has been reported [2] that photoconductivity is highly composition dependent in this system.…”

Section: -Introductionmentioning

confidence: 98%

Composition dependence of photoconductivity in amorphous thin films of Se70Te30−xSbx

1993

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Summary. --The present paper reports the composition dependence of steady-state and transient photoconductivity in amorphous thin films of SeToTe30_~Sbx, where x is varied from 0 to 10. The results indicate that photoconductivity is highly composition dependent in this system and a discontinuity in various electrical parameters is observed at 4 at. % of Sb. This is explained in terms of increased disorder up to 4 at. % of Sb. However, at higher concentration of Sb, an ordered structure may be established due to the formation of microcrystalline phases as observed in X-ray diffraction patterns.PACS 73.50 -Electronic transport phenomena in thin films.

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Composition dependence of photoconductivity in a-Se100−xTex

Cited by 18 publications

References 9 publications

Effect of Sb additive on the electrical properties of Se–Te alloy

Effect of Sb additive on the electrical properties of Se–Te alloy

Effect of In additive on the electrical properties of Se–Te alloy

Composition dependence of photoconductivity in amorphous thin films of Se70Te30−xSbx

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