Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer

High dielectric constant oxides

“…SrTiO 3 indeed has a small CB offset [78]. There is now recent data [88] for La 2 O 3 which agrees well with the prediction of 2.3 eV. La 2 O 3 and LaAlO 3 have a particularly large CB offsets [87,88] which means they could be the second generation high K oxides with lowest leakage.…”

“…The predicted CB offsets in this model [18,63] are given in Table 5 and Figure 25 for the various oxides. Table 5 compares these to the experimental values measured by photoemission, internal photoemission or barrier tunneling [78][79][80][81][82][83][84][85][86][87][88][89]. Photoemission measures the VB offset, and this is converted into the CB offset by subtracting the oxide and Si band gaps.…”

Analysis of Ultra-Thin HfO2/SiOn/Si(001): Comparison of Three Different Techniques

“…If appropriate information on the sample is available in advance, accurate depth profiling can be performed by AR-XPS. 6 In the present work, a typical high-k gate stack structure, HfO2 (2.5 nm)/SiON (1.6 nm)/Si(001), was analyzed by HRBS, HR-ERD and AR-XPS. By comparing with these results, the advantages and drawbacks of these techniques were considered with particular emphasis placed on the feasibility of nitrogen depth profiling.…”

Combination of high‐resolution RBS and angle‐resolved XPS: accurate depth profiling of chemical states

“…In this respect, angle-resolved X-ray photoelectron spectroscopy (AR-XPS) can be a good complement to HRBS. [3] The recent development of the data-analysis technique using maximum entropy method makes AR-XPS more reliable, but it is still difficult to derive accurate depth profiles only from the AR-XPS data. There is a well-known intrinsic problem in AR-XPS analysis related to the difficulty in inverse Laplace transformation.…”