Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering

Al-Bayati, A.; Orrman-Rossiter, Kevin; Berg, Jaap van den; Armour, D.G.

doi:10.1016/0039-6028(91)90214-d

Cited by 76 publications

(31 citation statements)

References 18 publications

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“…The calculated thickness values of the native silicon oxide layer are in agreement with those reported in the literature. 32 The fit of the whole set of data, i.e., considering all the intensity ratios calculated from the spectra acquired in parallel mode while physically tilting the sample, provided thickness values comparable to the ones determined using the data collected in parallel mode without any physical change in the specimen orientation.…”

Section: Angle-resolved Xpsmentioning

confidence: 65%

Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr

Mangolini

Åhlund

Wabiszewski

et al. 2012

Review of Scientific Instruments

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. (2012). Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr. Review of Scientific Instruments, 83(9) The paper presents the development and demonstrates the capabilities of a new laboratory-based environmental X-ray photoelectron spectroscopy system incorporating an electrostatic lens and able to acquire spectra up to 0.4 Torr. The incorporation of a two-dimensional detector provides imaging capabilities and allows the acquisition of angle-resolved data in parallel mode over an angular range of 14° without tilting the sample. The sensitivity and energy resolution of the spectrometer have been investigated by analyzing a standard Ag foil both under high vacuum (10 −8 Torr) conditions and at elevated pressures of N 2 (0.4 Torr). The possibility of acquiring angle-resolved data at different pressures has been demonstrated by analyzing a silicon/silicon dioxide (Si/SiO 2 ) sample. The collected angle-resolved spectra could be effectively used for the determination of the thickness of the native silicon oxide layer. The paper presents the development and demonstrates the capabilities of a new laboratory-based environmental X-ray photoelectron spectroscopy system incorporating an electrostatic lens and able to acquire spectra up to 0.4 Torr. The incorporation of a two-dimensional detector provides imaging capabilities and allows the acquisition of angle-resolved data in parallel mode over an angular range of 14 • without tilting the sample. The sensitivity and energy resolution of the spectrometer have been investigated by analyzing a standard Ag foil both under high vacuum (10 −8 Torr) conditions and at elevated pressures of N 2 (0.4 Torr). The possibility of acquiring angle-resolved data at different pressures has been demonstrated by analyzing a silicon/silicon dioxide (Si/SiO 2 ) sample. The collected angle-resolved spectra could be effectively used for the determination of the thickness of the native silicon oxide layer. Disciplines Mechanical Engineering

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Section: Angle-resolved Xpsmentioning

confidence: 65%

Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr

Mangolini

Åhlund

Wabiszewski

et al. 2012

Review of Scientific Instruments

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“…1 Although the ions are implanted at low energy and their range in the solid is very shallow, radiation damage is formed in Si. 2 High-temperature annealing is required in order to activate a sufficient fraction of the implanted dopant and to dissociate the most complex defects that evolve from the as-implanted radiation damage. It is during hightemperature annealing that transient enhanced diffusion 3 of the dopant occurs, resulting in a redistribution of the dopant over depths much deeper than expected for thermal equilibrium diffusion.…”

Section: Introductionmentioning

confidence: 99%

Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

et al. 2003

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Excimer laser annealing ͑ELA͒ of ultra-low-energy ͑ULE͒ B-ion implanted Si has been performed. Highresolution transmission electron microscopy has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been investigated as a function of the laser energy density ͑melted depth͒, the implant dose, and the number of laser pulses ͑melt time͒. The activated and retained dose has been evaluated with spreading resistance profiling and secondary ion mass spectrometry. A significant amount of the implanted dopant was lost from the sample during ELA. However, the dopant that was retained in crystal material was fully activated following rapid resolidification. At an atomic concentration below the thermodynamic limit, the activation efficiency ͑dose activated/ dose implanted into Si material͒ was a constant for a fixed melt depth, irrespective of the dose implanted and hence the total activated dose was raised as the implant dose was increased. The electrical activation was increased for high laser energy density annealing when the dopant was redistributed over a deeper range.

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“…Alternative theories to the TSM attribute the approximately uniform energy dependence of the DDOS to the nature of defect-defect interactions in bulk systems [44,[59][60][61][62][63], the behavior of the DDOS is unknown in reduced dimensional systems where defectdefect interactions are modified [44]. It's unknown to what extent crystalline materials may exhibit anisotropy, but systems constructed from materials such as silicon will inevitably have native oxide layers [69] that will concentrate tunneling states at surfaces.…”

Section: Theory Of Defect-phonon/defect-photon Interactions In Mmentioning

confidence: 99%

Dimensional transformation of defect-induced noise, dissipation, and nonlinearity

Behunin

Intravaia²,

Rakich

2016

Phys. Rev. B

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In recent years, material-induced noise arising from defects has emerged as an impediment to quantum-limited measurement in systems ranging from microwave qubits to gravity wave interferometers. As experimental systems push to ever smaller dimensions, extrinsic system properties can affect its internal material dynamics. In this paper, we identify surprising new regimes of material physics (defect-phonon and defect-defect dynamics) that are produced by dimensional confinement. Our models show that a range of tell-tale signatures, encoded in the characteristics of defect-induced noise, dissipation, and nonlinearity, are profoundly altered by geometry. Building on this insight, we demonstrate that the magnitude and character of this material-induced noise is transformed in microscale systems, providing an opportunity to improve the fidelity of quantum measurements. Moreover, we show that many emerging nano-electromechanical, cavity optomechanical and superconducting resonator systems are poised to probe these new regimes of dynamics, in both high and low field limits, providing a new way to explore the fundamental tenets of glass physics.

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Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering

Cited by 76 publications

References 18 publications

Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr

Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr

Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

Dimensional transformation of defect-induced noise, dissipation, and nonlinearity

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