Composition and microstructure of beryllium carbide films prepared by thermal MOCVD

He, Yudan; Luo, Jiangshan; Li, Jia; Meng, Lingbiao; Luo, Bing; Zhang, Jiqiang; Zeng, Yong; Wu, Weidong

doi:10.1016/j.fusengdes.2015.12.015

Cited by 5 publications

(5 citation statements)

References 24 publications

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“…The DEB precursor in liquid form has the saturated vapor pressure of 1.6 Torr at room temperature. 23 The cylinder containing DEB precursor was maintained at 60 °C. Argon was used as a precursor carrier gas at a flow rate of 20 standard cubic centimeters per minute (sccm).…”

Section: Methodsmentioning

confidence: 99%

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Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Lee

Jang

Jung

et al. 2019

ACS Appl. Electron. Mater.

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A crystalline beryllium oxide (BeO) film was grown on 4H-silicon carbide (4H-SiC) via thermal atomic layer deposition (ALD). Diethylberyllium and water were used as key precursors. The growth rate of BeO corresponded to 0.8 Å/cycle over the temperature range of 150–200 °C. Transmission electron microscopy and X-ray diffraction of BeO/4H-SiC demonstrated that wurtzite BeO (0002) was grown on 4H-SiC (0001) substrate. The average crystallite sizes of BeO were 15–16 nm, and the compressive strain was applied to the BeO film in the out-of-plane direction. The band alignment and interface defects of BeO/4H-SiC were determined by using internal photoemission spectroscopy (IPE), ultraviolet photoelectron spectroscopy (UPS), and reflection electron energy loss spectroscopy (REELS). The conduction band offset (CBO), valence band offset (VBO), and energy bandgap of 4H-SiC and BeO corresponded to 2.28 ± 0.1 eV, 2.53 ± 0.01 eV, 3.16 ± 0.1 eV, and 8.3 ± 0.05 eV, respectively. The calculated bandgap (7.97 eV) of a thin BeO film was obtained from the sum of CBO (2.28 eV), VBO (2.53 eV), and the SiC bandgap (3.16 eV). The difference between the calculated (7.97 eV) and REELS (8.3 eV) bandgaps of BeO film is due to the error bars between the analysis methods. Interface defect levels, as determined via IPE analysis, corresponded to 3.53 ± 0.1 eV (graphitic carbon) and 4.46 ± 0.1 eV (π-bonded carbon) and were formed during the ohmic annealing process.

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Section: Methodsmentioning

confidence: 99%

“…The detailed synthesis process and safety protocols of DEB are shown in Figure S1. The DEB precursor in liquid form has the saturated vapor pressure of 1.6 Torr at room temperature . The cylinder containing DEB precursor was maintained at 60 °C.…”

Section: Methodsmentioning

confidence: 99%

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Lee

Jang

Jung

et al. 2019

ACS Appl. Electron. Mater.

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“…We performed only two different deposition conditions in order to give the reader an idea of what can change from one kind of deposit to another kind of deposit, only changing one parameter, here the Be/C ratio. Note that studying systematically how the Be/C ratio (or other parameters [59,60]) impact on the materials obtained (structure, texture, gradient concentration, columnar growth [61]...) is not under the scope of this study. Figure 6-a displays the results with a flux ratio of Be/C=0.3 whereas Figure 6-b displays the results with a flux ratio of Be/C=1.…”

Section: Figure 4 Comparison Of In Depth Penetration Of Electromagnementioning

confidence: 99%

Preparing the future post-mortem analysis of beryllium-based JET and ITER samples by multi-wavelengths Raman spectroscopy on implanted Be, and co-deposited Be

et al. 2017

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This study demonstrates that Raman microscopy is a suitable technique for future post mortem analyses of JET and ITER plasma facing components. We focus here on laboratory deposited and bombarded samples of beryllium and beryllium carbides and start to build a reference spectral databases for fusion relevant beryllium-based materials. We identified the beryllium phonon density of states, its second harmonic and E 2G and B 2G second harmonic and combination modes for defective beryllium in the spectral range 300-700 and 700-1300 cm -1 , lying close to Be-D modes of beryllium hydrides. We also identified beryllium carbide signature, Be 2 C, combining Raman microscopy and DFT calculation. We have shown that, depending on the optical constants of the material probed, in depth sensitivity at the nanometer scale can be performed using different wavelengths. This way, we demonstrate that multi-wavelength Raman microscopy is sensitive to in-depth stress caused by ion implantation (down to ≈30 nm under the surface for Be) and Be/C concentration (down to 400 nm or more under the surface for Be+C), which is a main contribution of this work. The depth resolution reached can then be adapted for studying the supersaturated surface layer found on tokamak deposits.2

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“…coating fabrication [17,[20][21][22][23] . Lately, DC reactive magnetron sputtering was adopted and provided a new promising method to prepare Be 2 C coatings [24] .…”

Section: Introductionmentioning

confidence: 99%

“…developed radio frequency (RF) reactive magnetron sputtering for depositing coatings, which has a low deposition rate ( ). These shortcomings limited the development of coating fabrication [17, 20–23] . Lately, DC reactive magnetron sputtering was adopted and provided a new promising method to prepare coatings [24] .…”

Section: Introductionmentioning

confidence: 99%

An investigation progress toward Be-based ablator materials for the inertial confinement fusion

Luo

Zhang

et al. 2017

High Pow Laser Sci Eng

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The Be-based materials with many particular properties lead to an important research subject. The investigation progresses in the fabrication technologies are introduced here, including main three kinds of Be-based materials, such as Be-Cu capsule, Be 2 C ablator and high-purity Be material. Compared with the pioneer workgroup on Be-based materials, the differences in Be-Cu target fabrication were described, and a grain refinement technique by an active hydrogen reaction for Be coating was proposed uniquely. Be 2 C coatings were first prepared by the DC reactive magnetron sputtering with a high deposition rate (∼300 nm/h). Pure polycrystalline Be 2 C films with uniform microstructures, smooth surface, high density (∼2.2 g · cm 3 ) and good optical transparency were fabricated. In addition, the high-purity Be materials with metal impurities in a ppm magnitude were fabricated by the pyrolysis of organometallic Be.

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Composition and microstructure of beryllium carbide films prepared by thermal MOCVD

Cited by 5 publications

References 24 publications

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Preparing the future post-mortem analysis of beryllium-based JET and ITER samples by multi-wavelengths Raman spectroscopy on implanted Be, and co-deposited Be

An investigation progress toward Be-based ablator materials for the inertial confinement fusion

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