Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

Abstract

This version is available at https://strathprints.strath.ac.uk/19453/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660°C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

“…[33, 34]. Previous measurements in our system have given a temperature gradient, which could be considered linear in a first approach, of about −1.25 °C/mm from the centre of the wafer, although it actually becomes stronger as we get closer to the edge.…”

“…In order to obtain a great number of different compositions of GaAs 1 − x − y Sb x N y alloys, we take advantage of the temperature gradient present during the MBE growth from the centre of the wafer to its edge. [ 33 , 34 ]. Previous measurements in our system have given a temperature gradient, which could be considered linear in a first approach, of about −1.25 °C/mm from the centre of the wafer, although it actually becomes stronger as we get closer to the edge.…”

Indium incorporation in quaternary In x Al y Ga1−x−y N for UVB-LEDs

“…Since determining the composition of InAlGaN by HRXRD is not possible, WDX measurements were performed. 20) Figure 2 shows the In-, Al-, and Ga-content of the grown In x Al y Ga 1−x−y N layers (green circles) and Al y Ga 1−y N layers (blue triangles) at different growth conditions as determined by WDX. Furthermore, results for the composition of In x Al y Ga 1−x−y N by simulation of the gas and surface chemistry are shown.…”

Assessing the Impact of Secondary Fluorescence on X-Ray Microanalysis Results from Semiconductor Thin Films

“…The very low detection limits possible with WDX also allow the analysis of trace elements (Ritchie et al, 2012; Batanova et al, 2018; Vind et al, 2018) with concentrations on the order of 10 ppm (Donovan et al, 2011) being quantifiable. These same principles have then been applied to semiconductor characterization; using WDX to determine and map the composition of the main semiconductor material and trace element analysis to quantify material dopant densities and identify undesired impurities (Nakajima et al, 1978; Bejtka et al, 2008; Kusch et al, 2017). While there are more established techniques used to determine doping concentrations, such as secondary ion mass spectrometry (SIMS; Chu et al, 1998), WDX benefits from being nondestructive and allowing simultaneous acquisition of other characteristic signals such as cathodoluminescence (Lee et al, 2005; Pownceby et al, 2007; Edwards & Martin, 2011).…”