Component redistribution during Nb and In/Nb film growth on single-crystal silicon

Afonin, N. N.; Logacheva, V. A.; Khoviv, A. M.; Vakhtel, V.M.; Shramchenko, Yu. S.

doi:10.1134/s0020168509090106

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2013

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“…Indium and indium compounds are widely used in various areas of science, technology, and industry owing to their many advantageous properties [6][7][8][9][10][11][12][13][14][15]. Indium is employed as a sealant in vacuum devices and spacecraft and as a dopant in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Photostimulated growth of In-In2O3 films

Суровой

Ramazanova

2013

Inorg Mater

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Exposure to light of intensity I =1.12 × 10 15 to 7.0 × 10 15 photons/(cm 2 s) at λ = 360 nm and T = 293 K produces significant changes in the absorption and reflection spectra and weight of indium films 1 to 32 nm in thickness. Kinetic curves for the photochemical transformation of the indium films are adequately represented by a linear, inverse logarithmic, parabolic, or logarithmic rate law. We have measured the contact potential difference across the In and In 2 O 3 films and the photovoltage in the In-In 2 O 3 system. A model has been proposed which includes the generation and redistribution of nonequilibrium charge carriers in the In-In 2 O 3 interfacial field, oxygen adsorption, In 3+ diffusion, and In 2 O 3 formation.

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