2008 20th International Conference on Indium Phosphide and Related Materials 2008
DOI: 10.1109/iciprm.2008.4702925
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Complicated effects of nitrogen on the structural and optical properties of InAs(N)/GaAs quantum dots

Abstract: InAs(N)/GaAs quantum dots were studied by x-ray diffraction, photoluminescence (PL) spectra, and atom force microscopy. Complicated blue shift in the PL peak energy with increasing nitrogen concentration was observed. This shift arises from the quantum size effect in the quantum dots, which dominates the nitrogen induced reductions of the InAsN band gap. Keywords-InAsN; quantum dots; photoluminescence; quantum size effectI.

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