In this work, we report the development and characterization of an atom chip for magnetic trapping of cold [Formula: see text] atoms. For fabrication of the atom chip, a silicon substrate was used after depositing an insulating layer of silica ([Formula: see text]) on it. An adhesive chromium layer was further deposited on this substrate before the deposition of the final layer of gold. On this gold coated substrate, a z-shaped gold wire (cross section, [Formula: see text]) was fabricated by a photo-chemical machining method. The chip wire was tested for current–voltage characteristics for its reliable operation in magnetic trapping. The atoms from an U-magneto-optical trap, after optical pumping, were directly trapped in the magnetic trap of the atom chip.