Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs

Amarasinghe, Nuditha Vibhavie; Çelik‐Butler, Zeynep

doi:10.1016/s0038-1101(99)00324-x

Cited by 35 publications

(9 citation statements)

References 16 publications

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“…Once again, the values (α ∼ 10 −12 − 10 −13 Vs) are higher than what was previously reported (α ∼ 10 −13 − 10 −15 Vs) [11], [13], which indicates a strong coupling of trapped charges to channel carriers. As mentioned above, this is attributed to the defect potential perturbation of trapped charges having a large effect on an ultrathin channel.…”

Section: Methodscontrasting

confidence: 59%

“…The mean times spent in the high and low current states of the first device (which shows a single active trap) were investigated for their dependence on gate voltage |V G − V TH |. Since trap occupancy increases with increased gate bias magnitude, the ratio of the mean capture and emission times τ c / τ e should show a decrease [11]. The time spent in the high current state corresponds to τ c , and τ e corresponds to the time spent in the low current state, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Lim

Xiong

Singh

et al. 2006

IEEE Electron Device Lett.

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For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f ) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ∼ 100 nm (fin height) and length of ∼ 200 nm, the typical RTS capture/emission time constants were ∼ 0.1-1 ms. Very large RTS amplitudes (∆I d /I d up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients (α ∼ 10 −12 − 10 −13 ) are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation. Index Terms-FinFET, flicker(1/f ) noise, gate-all-around (GAA), noise, random telegraph signals (RTS).

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Section: Methodscontrasting

confidence: 59%

Section: Methodsmentioning

confidence: 99%

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Lim

Xiong

Singh

et al. 2006

IEEE Electron Device Lett.

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“…The high level in current corresponds to the charged trap state. With increasing gate bias, the trap occupancy increases [22]. Also, the time in the high current level increases with gate voltage.…”

Section: /F Noisementioning

confidence: 97%

“…The ratio of capture to emission times (τ c / τ e ) shows a gradual decrease with gate voltage. The high current time being τ e and the low current time as τ c The following can be written [22]:…”

Section: /F Noisementioning

confidence: 99%

Silicon Nanowire FinFETs

Mukherjee¹,

Maiti²

2012

Nanowires - Recent Advances

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FinFΔT SNWFT is being considered as the candidate for CMOS scaling beyond the nm node due to its high performance, excellent gate control and enhanced carrier transportation properties. Thin and multi-gate controlled body provide FinFΔTs a superior short-channel effect control, electrostatic shielding from the body bias, relaxing channel doping or pocket implants, commonly needed in planar technologies to avoid threshold voltage V TH roll-off [ ]. Adequate device V TH is now being achieved by using gate stack engineering. MetalGates with High-k HKMG dielectric stacks provide the desired V TH by work-function tuning as well as preserving low gate leakage [ ]. Various process options are being attempted to affect carrier transport in a different manner. The use of metal gates as replacement for Poly-Si stacks eliminates the Poly-depletion effect, benefiting effective carrier mobility by reducing the transverse field [ ]. Additionally, use of undoped channels improves low-field μ eff due to the reduction in the substrate impurity scattering [ ]. Mobility degradation due to Coulomb scattering in short-channel devices should further be reduced in the absence of pocket implants [ ]. However, high-k dielectrics are known to degrade mobility as a result of a combination of Coulomb and phonon scattering mechanisms [ ]. In order to account for inversion layer mobility degradation mechanisms for FinFΔT devices, a robust μ eff extraction algorithm is necessary. The mobility extraction requires accurate measurement of both gate to channel capacitance and channel current, together with reliable estimations for the parasitic Source-Γrain series resistance R SΓ and the effective channel length [ ]. Unfortunately, the capacitance of short-channel length devices in the presence of large gate leakage is no longer characterized trivially. In multi-gate architectures like the FinFΔT, the carrier transport occurs in different crystallographic planes. For standard substrates, the current flow occurs in the / for the top surface and / for the sidewalls. The transport in these crystal planes and directions are characterized by different mobility primarily due to the anisotropy of the effective masses.The most promising among various Si multi-gate MOSFΔT architectures such as double-gate and tri-gate FinFΔTs, are nanowire FinFΔTs due to their superior electrostatic control through gate-all-around structure. Superior gate control, immunity of threshold voltage from substrate bias and excellent carrier transport properties along with more aggressive channel length scaling possibility have made GAA architecture with semiconductor nanowire channel a potential candidate for post-planar transistor design. Two approaches are generally used to fabricate Si NWs as well as other semiconductor NWs bottom-up and topdown. In the first method, NWs are usually grown using a metallic catalyst on a separate substrate, usually through a Vapor-Liquid-Solid VLS growth mechanism. After a chemical or mechanical separation step, the NWs are harvested and trans...

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“…Here, f 0 = 1/(2πτ), 1/τ = 1/τ c + 1/τ e , and k = 4τ 2 V 2 DS /(τ c +τ e ). V DS is computed with the user-provided parameters α 0 and α 1 , which are readily available in the literature if the specific values are unknown [40], [41].…”

Section: Rts Modeling and Simulationmentioning

confidence: 99%

A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects

Nour

Çelik‐Butler

Sonnet

et al. 2016

IEEE Trans. Electron Devices

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Investigating random telegraph signals (RTS) observed in MOS devices is important for studying the gate-oxide defect characteristics and developing simulation and modeling tools in highly scaled devices. In this paper, we are presenting a comprehensive, variable-temperature, single-to-multitrap scalable RTS model and a simulation tool (RTSSIM) based on the first principles, and supported by experimental data. The physical and electrical characteristics of the actual oxide defects are considered, such as trapping barrier energy, capture cross section, trap-binding enthalpy, entropy change with emission, Coulombic scattering effect, and the trap location. Experimentally obtained time-domain switching data and RTS traces reconstructed by the developed simulation tool are compared for assessing the accuracy of the modeling. In this paper, we identified the trap species responsible for the RTS as an unrelaxed neutral oxygen deficiency center (V 0 ODC II) with measured and theoretically verified relaxation energy of 1.11, 1.25, and 0.60 eV. RTSSIM is a tool used to mimic or reproduce a given noise measurement on a particular device. The simulation tool shows over 92% accuracy in replicating the RTS and trap characteristics. The model also represents the first realistic simulation of multilevel RTS.Index Terms-Complex random telegraph signals (RTS), gate-oxide traps, RTS simulation, RTS, SiO 2 oxygen vacancies.

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Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs

Cited by 35 publications

References 16 publications

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Silicon Nanowire FinFETs

A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects

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