Complex Permittivity Measurements of Thin Ferroelectric Films Employing Split Post Dielectric Resonator

Křupka, J.; Huang, Wei-Te; Tung, Mean-Jue

doi:10.1080/00150190600689415

Cited by 15 publications

(10 citation statements)

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“…This level of inaccuracy leads to a relative error of 12% for the retrieved permittivity (real part) of the layer. This is confirmed by a previous experimental study, 13 which showed that it is possible to measure real permittivity of ferroelectric films having submicronic thickness and permittivity range of 100-10000 with uncertainties similar to uncertainties about their thickness. Finally, in this campaign, permittivity measured in the cavity can be considered as the reference value fixed here at 12 GHz.…”

Section: B Error Analysissupporting

confidence: 86%

“…Mono-frequency methods use resonating modes in cavities. [8][9][10][11][12][13] The insertion of a sample into the cavity induces a shift in its resonant frequency and quality factor. The measurement of these variations enables highly accurate determination of the quantities e r and tand at a single frequency.…”

Section: Em Characterization Of Dielectric Thin Filmsmentioning

confidence: 99%

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Intercomparison of permittivity measurement techniques for ferroelectric thin layers

Quéffélec¹,

Laur²,

Chevalier³

et al. 2014

Journal of Applied Physics

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The dielectric properties of a KTa 0.65 Nb 0.35 O 3 ferroelectric composition for a submicronic thin layer were measured in the microwave domain using different electromagnetic characterization methods. Complementary experimental techniques (broadband methods versus resonant techniques, waveguide versus transmission line) and complementary data processing procedures (quasi-static theoretical approaches versus full-wave analysis) were selected to investigate the best way to characterize ferroelectric thin films. The measured data obtained from the cylindrical resonant cavity method, the experimental method that showed the least sources of uncertainty, were taken as reference values for comparisons with results obtained using broadband techniques. The error analysis on the methods used is discussed with regard to the respective domains of validity for each method; this enabled us to identify the best experimental approach for obtaining an accurate determination of the microwave dielectric properties of ferroelectric thin layers.

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Section: B Error Analysissupporting

confidence: 86%

Section: Em Characterization Of Dielectric Thin Filmsmentioning

confidence: 99%

Intercomparison of permittivity measurement techniques for ferroelectric thin layers

Quéffélec¹,

Laur²,

Chevalier³

et al. 2014

Journal of Applied Physics

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“…Split post dielectric resonators that have been developed about 15 years ago [1] are now commonly used for the measurements of the complex permittivity of printed wiring board and low temperature co-fired ceramic materials [2], ferroelectric films [3] and conductive materials [4]. The most precise measurements with such resonators are performed employing Vector Network Analysers (VNA).…”

Section: Introductionmentioning

confidence: 99%

Automatic Split Post Dielectric Set-up for Measurements of Substrates and Thin Conducting and Ferroelectric Films

2012

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We have developed an inexpensive computer controlled microwave oscillator system that enables quick and automatic measurements of the complex permittivity with a specific split post dielectric resonator (SPDR). It is based on a phase-locked loop Microwave Voltage Controlled Oscillator intended for the Q-factor and the resonance frequency measurements of SPDR. Multipoint resonance curve fitting procedure allows accurate Q-factor determination. The only external information that is necessary for the complex permittivity determination of a dielectric substrate or a ferroelectric film is the thickness of the sample under test. We compare the complex permittivity measurement results on few dielectric samples employing Vector Network Analyser and our measurements setup. We also present measurement results of the sheet resistance and resistivity of epitaxial GaN films deposited on sapphire substrates.

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“…An accurate characterization technique was recently elaborated using split post dielectric resonator. 1 However, this approach requires a separate test sample and, therefore, cannot be used to characterize thin film locally. Additionally, split post resonator does not support characterization of thin ferroelectric films deposited on top of an electrode, which is often required in practice.…”

Section: Introductionmentioning

confidence: 99%

Characterization techniques for thin and thick ferroelectric films

Deleniv

2007

Journal of the European Ceramic Society

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Complex Permittivity Measurements of Thin Ferroelectric Films Employing Split Post Dielectric Resonator

Cited by 15 publications

References 1 publication

Intercomparison of permittivity measurement techniques for ferroelectric thin layers

Intercomparison of permittivity measurement techniques for ferroelectric thin layers

Automatic Split Post Dielectric Set-up for Measurements of Substrates and Thin Conducting and Ferroelectric Films

Characterization techniques for thin and thick ferroelectric films

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