Complex conductivity in the presence of long range potential fluctuations. Application to the determination of the gap state density in undoped and boron doped a-Si : H films grown by CVD

MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films

“…More, Pistoulet and coworkers [22] have shown that, often, conductivity phenomenum attributed to hopping conductivity may be fitted by a long range potential fluctuations model. In order to discriminate between these hypothesis, ac conductivity measurements should be realized [22]. Today we can only say that the grain boundary model alone cannot explain the variation of the conductivity with the temperature in all the temperature range investigated.…”