Complete Stability Analysis of Multifunction MMIC Circuits

Barquinero, C.; Suárez, Almudena; Herrera, A.; García, José Luis

doi:10.1109/tmtt.2007.906498

Cited by 24 publications

(19 citation statements)

References 13 publications

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“…The largest Lyapunov exponent of (a) is +0.00937, which means the system is unstable. The Lyapunov exponent of the tested voltage at point (2), shown in Fig. 2(b), is +0.0087, which also indicates the system is unstable.…”

Section: A Floating Negative Capacitor To Match Monopolementioning

confidence: 99%

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Time-domain stability analysis/design of negative impedance Inverters and converters

Elfrgani

Moussounda

Rojas

2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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Non-Foster circuits are attractive for microwave and antenna applications since they are not restricted by the gain-bandwidth product. Two topologies to implement these components are the Negative impedance converters and Inverters (NIC and NIIs). A problem with these circuits is the potential instability due to the presence of positive feedback. The stability properties of these circuits are discussed with a timedomain technique that computes the Lyapunov exponents for the nonlinear system. Index Terms -Lyapunov Exponent, Non-Foster, Stability Analysis.

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Section: A Floating Negative Capacitor To Match Monopolementioning

confidence: 99%

“…Since this analysis shows unstable behavior, a stablization network should be added within the loop of the NFC. After adding such a stablization network [9], the system was tested again at points (1) and (2), and the resulting signals can be seen in Fig. 3.…”

Section: A Floating Negative Capacitor To Match Monopolementioning

confidence: 99%

Time-domain stability analysis/design of negative impedance Inverters and converters

Elfrgani

Moussounda

Rojas

2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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“…A complete but complex analysis procedure for such a circuit is presented in Ref. [20]. A more limited but easierto-implement procedure is proposed and discussed here: starting from the unconditional stability criteria for two ports and assuming a fixed load termination in a third port, formulation by Ref.…”

Section: B Nonlinear Extension Under Large-signal Pumpingmentioning

confidence: 99%

“…The choice of the sensitive node requires some designer expertise because poles of the transfer function are supposed to be the same in any node, but pole-zero cancellation may happen in some nodes, masking unstable poles [20]. Terminals of active devices are usually the most suitable choice, and the repetition of the analysis from different nodes is advisable.…”

Section: Conversion Matrix-based Pole-zero Identificationmentioning

confidence: 99%

Nonlinear circuit stability under large-signal pumping: Three-port μ stability factor versus conversion matrix system identification-application to a millimeter-wave band MMIC up-converter

Detratti¹,

Aja²,

Fuente³

et al. 2010

Int J RF and Microwave Comp Aid Eng

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This article presents and discusses a method to determine stability in nonlinear three-port circuits based on a generalized three-port l stability factor applied to linearized S parameters under large-signal pumping. A comparison with an extension of the conversion matrix-based, system pole-zero identification used to analyze circuit stability is also presented. The relationship between the two techniques has been verified by means of an ideal two-port nonlinear circuit, and then, it has been applied in the design of a three-port millimeter-wave Monolithic Microwave Integrated Circuit (MMIC) up-converter. The circuit has been fabricated in a commercial GaAs process. On-wafer measurements showed an average conversion loss about 3.5 dB in a RF bandwidth between 40.4 and 41.5 GHz with local oscillator (LO) frequency fixed at 42.5 GHz. A RF/LO isolation better than 25 dB was measured in the whole band, also showing outstanding intermodulation performance. With the proposed approach, the appearance of spurious oscillations was prevented.

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“…Next, it is also critical to perform nonlinear parametric and odd stability studies under high power excitation. The strategy adopted for this analysis is based on pole-zero identification of the frequency response obtained at critical nodes of the final circuit (Barquinero et al, 2007). Finally, to avoid irreversible device degradation, thermal simulations are required to accurately predict the highest channel temperature and thermal coupling between transistors.…”

Section: Introductionmentioning

confidence: 99%

Broadband GaN MMIC Power Amplifiers design

Gonzalez-Garrido¹,

Grajal²

2010

Microwave and Millimeter Wave Technologies Modern UWB Antennas and Equipment

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AlGaN/GaN HEMT TechnologyFirst of all, MMIC GaN technology has to be evaluated. High power GaN devices operate at high temperature and high-dissipated power due to the high power density of performance. Therefore, the use of substrates with high thermal conductivity like the silicon carbide (SiC) is preferred. GaN technological process is still immature and complex. However, gate lithography resolution lower than 0.2 m and AlGaN/GaN epi-structures on 100-mm SiC substrates are already available (Milligan et al., 2007). 22www.intechopen.com

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Complete Stability Analysis of Multifunction MMIC Circuits

Cited by 24 publications

References 13 publications

Time-domain stability analysis/design of negative impedance Inverters and converters

Time-domain stability analysis/design of negative impedance Inverters and converters

Nonlinear circuit stability under large-signal pumping: Three-port μ stability factor versus conversion matrix system identification-application to a millimeter-wave band MMIC up-converter

Broadband GaN MMIC Power Amplifiers design

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