Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices

Abstract

Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4bis(di(1H-indol-3-yl)methyl)benzene (Indole1) molecules. Our earlier study revealed that Au/Indole1/Indium tin oxide (ITO) devices showed BRS under ambient conditions. However, the present investigations revealed that when the device is exposed to 353 K or higher temperatures, dynamic evolution of the Au/ Indole1/ITO device from BRS to CRS occurred with a very good memory window (∼10 3 ), data retention (5.1 × 10 3 s), stability (50 days), and device yield (∼ 60%). This work explores the application possibility of indole derivatives toward future ultradense resistive random access memory.

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

“…The corresponding I – V curve reveals that the device retains its ON state even after the removal of the external power supply (Figure S5 shown in the Supporting Information). This confirms that the present IC-based device shows nonvolatile memory behavior. , …”

“…This confirms that the present IC-based device shows nonvolatile memory behavior. 58,59 Information about the reproducibility and sustainability of the designed memory devices is required for probable practical and commercial applications. 53,60 Reproducibility of the designed memory device was checked in several consecutive scanning cycles in the direction 0 3a,b).…”

Understanding the complementary resistive switching in egg albumen-based single sandwich structure with non-inert Al electrode

“…The slope of the curve is 1.94, close to 2, indicating that the conduction can be described by the Mott-Gurney (MG) law I ∝ V 2 [40]. This suggests that the current through the Al/Albumen/ITO device is initially governed by the injected charge carriers and trap centers in the active layer [22]. When the CRS device switches to the positive LRS (PLRS), the experimental data can be well fitted with the linear relationship ln(I) ∼ V 1/2 , as shown in figure 4(b).…”

“…The memory performance was further evaluated by conducting the cycling endurance characteristic test by applying alternate positive and negative voltage sweeps on the Al/Albumen/ITO device [13,17,22]. Figure 2(d) shows the evolution of LRS and HRS in 140 consecutive switching cycles, exhibiting a favorable and robust memory margin of 10 2 , significantly higher than the commercial standard (10) [10].…”

“…Notably, CRS characteristics are mainly realized in oxide-based heterostructures, which may suffer from the disadvantages of brittleness, incompatibility, and high-cost fabrication [21]. Up to now, the possibility of using organic materials to construct CRS devices has seldom been investigated so far [22]. It would be desirable to develop high-performance CRS devices based on organic materials.…”