2020
DOI: 10.1002/adfm.202001760
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Complementary n‐Type and p‐Type Graphene Films for High Power Factor Thermoelectric Generators

Abstract: Solution-phase exfoliated graphene has always been an attractive material for flexible thermoelectric applications, but traditional oxidative routes suffer from poor flake quality and a lack of quality doping techniques to make complementary n-type and p-type films. Here, it is demonstrated that by changing the adsorbed surfactant during the intercalation-exfoliation process (polyvinylpyrrolidone for n-type, pyrenebutyric acid for p-type), both extremely high electrical conductivity (3010 and 2330 S cm −1 ) an… Show more

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Cited by 33 publications
(32 citation statements)
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“…A likely reason is that the absence of other than atmospheric dopants results in a lower charge carrier concentration, but at the same time, there are no large dopant molecules contributing to carrier scattering, which promotes higher carrier mobility. While the resistivities observed in this work range from 48 to 87 µΩ m, in sound agreement with similarly fabricated films [ 20 ], the values are an order of magnitude greater compared to those reported by Novak et al [ 16 ], likely due to smaller flake size and, thus, shorter carrier mean free path and enhanced interface scattering. As a further comparison, the mobility values of inkjet-printed n-type graphene films have been reported to possess electron mobilities ranging from 8.9 to 23.9 cm 2 V −1 s −1 as a function of increasing film thickness [ 50 ], agreeing well with the results reported here.…”
Section: Discussionsupporting
confidence: 91%
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“…A likely reason is that the absence of other than atmospheric dopants results in a lower charge carrier concentration, but at the same time, there are no large dopant molecules contributing to carrier scattering, which promotes higher carrier mobility. While the resistivities observed in this work range from 48 to 87 µΩ m, in sound agreement with similarly fabricated films [ 20 ], the values are an order of magnitude greater compared to those reported by Novak et al [ 16 ], likely due to smaller flake size and, thus, shorter carrier mean free path and enhanced interface scattering. As a further comparison, the mobility values of inkjet-printed n-type graphene films have been reported to possess electron mobilities ranging from 8.9 to 23.9 cm 2 V −1 s −1 as a function of increasing film thickness [ 50 ], agreeing well with the results reported here.…”
Section: Discussionsupporting
confidence: 91%
“…When compared to results from previous studies on p-type liquid-phase exfoliated graphene films, the electronic properties agree well with atmospherically doped films [ 20 ]. However, in comparison to polymer-doped films, our results show a lower hole concentration but a larger carrier mobility [ 16 ]. A likely reason is that the absence of other than atmospheric dopants results in a lower charge carrier concentration, but at the same time, there are no large dopant molecules contributing to carrier scattering, which promotes higher carrier mobility.…”
Section: Discussionmentioning
confidence: 88%
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“…For ionic salts, this can be easily accomplished by heating in an inert environment to allow dissociation of the salt without formation of side products. This approach has been widely reported to generate graphene of higher aspect ratio than other approaches, [70][71][72] and is commonly adapted for other VDW materials such as WS 2 and MoS 2 . 73 Fig.…”
Section: Exfoliation and Oxidation From Wsmentioning
confidence: 99%