Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells

Kusunoki, Hiroki; Ishizuka, Takahide; Ogura, Atsushi

doi:10.1143/apex.4.115601

Cited by 8 publications

(3 citation statements)

References 16 publications

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“…Control of these light-element impurities, i.e., interstitial oxygen (O i ) and substitutional carbon (C s ), has become essential because light-element impurities affect solar sell performance through defect formation. [17][18][19][20][21][22][23][24][25][26][27] It is necessary to accurately clarify the mechanism of generation of the light-element impurities in Si crystals grown by the seed-casting method to develop methods to suppress the degradation in solar cell efficiency.…”

Section: Introductionmentioning

confidence: 99%

Distribution of light-element impurities in Si crystals grown by seed-casting method

Nakayama

Kojima

Ogura

et al. 2018

Jpn. J. Appl. Phys.

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We investigated the distributions of interstitial oxygen (O i ) and substitutional carbon (C s ) in high-performance (HP) multicrystalline Si (mc-Si) and monocrystalline-like Si (mono-like Si) and compared them with those in conventional mc-Si, grown using the same furnace. The O i concentration in mono-like Si grown using a Czochralski (Cz) silicon seed was the highest among the three crystals. On the other hand, the O i and C s concentrations in HP mc-Si grown using Siemens Si incubation seeds were the same as those in conventional mc-Si. Therefore, it is considered that O i incorporated into the growing Si crystal originates not only from the quartz crucible wall but also from the seed. Additionally, O i and C s in HP mc-Si grown on the incubation seeds with adequately low O i and C s concentrations are distributed similarly to those in conventional mc-Si grown under the same conditions. We believe that it is important to consider the O i and C s concentrations in the feed stock materials both for the seed and whole ingots in the seed-casting method.

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Section: Introductionmentioning

confidence: 99%

Distribution of light-element impurities in Si crystals grown by seed-casting method

Nakayama

Kojima

Ogura

et al. 2018

Jpn. J. Appl. Phys.

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“…Oxygen occupies an interstitial site (Oi) and carbon a substitutional site (Cs), and nitrogen exists as complexes called NN and NNO in the silicon crystal. 4) These impurities are often inhomogeneously distributed as a result of segregation in the crystal, 5) and if the concentration of these light-element impurities was above the solid-solubility limit, precipitation would occur. [6][7][8] These precipitates may degrade the conversion efficiency of solar cells.…”

Section: Introductionmentioning

confidence: 99%

Electrically active light-element complexes in silicon crystals grown by cast method

Sato

Ogura

2016

Jpn. J. Appl. Phys.

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Electrically active light-element complexes called thermal donors and shallow thermal donors in silicon crystals grown by the cast method were studied by low-temperature far-infrared absorption spectroscopy. The relationship between these complexes and either crystal defects or light-element impurities was investigated by comparing different types of silicon crystals, that is, conventional cast-grown multicrystalline Si, seed-cast monolike-Si, and Czochralski-grown Si. The dependence of thermal and the shallow thermal donors on the light-element impurity concentration and their annealing behaviors were examined to compare the crystals. It was found that crystal defects such as dislocations and grain boundaries did not affect the formation of thermal or shallow thermal donors. The formation of these complexes was dominantly affected by the concentration of light-element impurities, O and C, independent of the existence of crystal defects.

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“…The concentration ratio NN/NNO might depend on the O concentration and also on the crystal defects that are inhomogeneously distributed inside of the Si ingot. Kusunoki et al 6) reported that NN and NNO are complementally distributed in the cast-grown multicrystalline silicon ingot. This inhomogeneous distribution of the NN/NNO ratio is probably caused by inhomogeneously distributed crystal defects.…”

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Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon

Motoizumi

Kusunoki

Sato

et al. 2013

Appl. Phys. Express

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The chemical reaction near the crucible wall during directional solidification of Si crystals for solar cells has been investigated. Fragments of the crucible that were used for the crystal growth of a Si ingot were examined. As results, we found that a chemical reaction took place at the coating/crucible interface and that silicon oxynitride particles precipitated near the crucible wall. The oxynitride precipitates were determined as stoichiometric Si2N2O and were revealed not to be amorphous but of orthorhombic crystal symmetry. We show crucial evidence of the formation of stoichiometric Si2N2O microcrystalline precipitates inside the Si crystal.

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Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells

Cited by 8 publications

References 16 publications

Distribution of light-element impurities in Si crystals grown by seed-casting method

Distribution of light-element impurities in Si crystals grown by seed-casting method

Electrically active light-element complexes in silicon crystals grown by cast method

Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon

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Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells

Cited by 8 publications

References 16 publications

Distribution of light-element impurities in Si crystals grown by seed-casting method

Distribution of light-element impurities in Si crystals grown by seed-casting method

Electrically active light-element complexes in silicon crystals grown by cast method

Formation of Si2N2O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon

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Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon