Competitive immunological detection of progesterone by means of the ion-step induced response of an immunoFET

Schasfoort, Richardus B.M.; Keldermans, C.E.J.M.; Kooyman, R.P.H.; Bergveld, Piet; Greve, Jan

doi:10.1016/0925-4005(90)80232-o

Cited by 14 publications

(2 citation statements)

References 3 publications

(4 reference statements)

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“…SiO 2 as gate dielectric has been replaced with more reactive surface materials such as Er 2 O 3. 59 Another option to increase the ion interaction is surface modification for specific target recognition 53, 62. Finally the sensitivity is enhanced in diamond based ISFETs by using extremely thin dielectrics to increase the gate capacitance 53.…”

Section: Sensing Analytes In Aqueous Solutionsmentioning

confidence: 99%

Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors

et al. 2011

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The first dual‐gate thin‐film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a‐Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the first gate. The main advantage is that the threshold voltage can be set as a function of the applied second gate bias. The shift depends on the ratio of the capacitances of the two gate dielectrics. Here we review the fast growing field of DGTFTs. We summarize the reported operational mechanisms, and the application in logic gates and integrated circuits. The second emerging application of DGTFTs is sensitivity enhancement of existing ion‐sensitive field‐effect transistors (ISFET). The reported sensing mechanism is discussed and an outlook is presented.

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Section: Sensing Analytes In Aqueous Solutionsmentioning

confidence: 99%

Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors

et al. 2011

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“…Only in low ionic strength electrolytes might the protein charges be statically detected 19. To circumvent this limitation, dynamic detection techniques such as the ion‐step approach have been introduced 4, 20–22. The operation then relies on release or uptake of protons by bound protein molecules when the ionic strength of the electrolyte is changed.…”

Section: Operation Mechanism Of Dual‐gate Transducersmentioning

confidence: 99%

Dual‐Gate Organic Field‐Effect Transistors as Potentiometric Sensors in Aqueous Solution

Spijkman

Brondijk

Geuns

et al. 2010

Adv Funct Materials

143

119

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Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yield dual‐gate organic transducers. The process technology is scaled up to 150‐mm wafers. The transducers are potentiometric sensors where the detection relies on measuring a shift in the threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. Analytes can only be detected within the Debye screening length. The mechanism is assessed by pH measurements. The threshold voltage shift depends on pH as ΔVth = (Ctop/Cbottom) × 58 mV per pH unit, indicating that the sensitivity can be enhanced with respect to conventional ion‐sensitive field‐effect transistors (ISFETs) by adjusting the ratio of the top and bottom gate capacitances. Remaining challenges and opportunities are discussed.

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Immunologically Sensitive Field‐Effect Transistors

Zachariah

Gopalakrishnakone

Neužil

2006

Encyclopedia of Medical Devices and Instrumentation

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The Immunologically Sensitive Field‐Effect Transistors (IMFETs) represent the amalgamation of the technologies of Solid‐state electronics and Immunodiagnostics. The immunosensor is fabricated by immobilizing immunoagent, preferably, antibody on the gate region of an Ion‐Sensitive Field Effect Transistor (ISFET). Consequently, IMFETs embodying a range of monoclonal antibodies and the unique ISFET transduction mechanism could, in principle, be made possible for detection of a wide array of analytes, ranging from small biomolecules to bacteria. There have been several studies describing the application of ISFET as the IMFET, and they are broadly discussed in two headings, viz., Direct‐acting (label free) IMFET and Indirect‐sensing IMFET. In the label free approach, antibody‐antigen reaction has been monitored without addition of enzyme labels. Whereas the latter approach utilizes the advantage of enzyme label to indirectly monitor the antibody‐antigen reaction with pH‐sensitive ISFET. This chapter describes the challenges met with the development of practical IMFETs, their strengths and limitations.

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Competitive immunological detection of progesterone by means of the ion-step induced response of an immunoFET

Cited by 14 publications

References 3 publications

Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors

Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors

Dual‐Gate Organic Field‐Effect Transistors as Potentiometric Sensors in Aqueous Solution

Immunologically Sensitive Field‐Effect Transistors

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