Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects

Altieri, P.; Gurioli, Massimo; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Frigeri, P.; Franchi, Stefano

doi:10.1140/epjb/e2002-00217-7

Cited by 7 publications

(4 citation statements)

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“…The sample was cooled at 15 K. PL peaks of 1.32 and 1.36 eV were observed from the SiO x /GaAs substrate without InAs QDs. According to previous reports, 25,26) these peaks originated from Cu impurity-arsenic vacancy complex centers in the GaAs substrate.…”

Section: Experimental Methodsmentioning

confidence: 53%

“…2, the Cu impurity-arsenic vacancy complex center in the GaAs substrate revealed small PL peaks at 1.32 and 1.36 eV. 25,26) The PL intensity of the 3.0 × 10 −5 Torr As 2 sample was about three times higher than that of the 3.0 × 10 −5 Torr As 4 sample. The PL peak of the 3.0 × 10 −5 Torr As 2 sample was about 130 meV higher than that of the 3.0 × 10 −5 Torr As 4 sample.…”

Section: Resultsmentioning

confidence: 97%

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Molecular beam deposition of high-density InAs quantum dots on SiO_x films

Makaino¹,

Tanaka²,

Yamaguchi³

2019

Jpn. J. Appl. Phys.

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InAs quantum dots (QDs) were grown on SiO x films by molecular beam deposition (MBD), and then an SiO x capping layer was deposited by rf magnetron sputtering. High arsenic pressure and As 2 molecular beam flux enhanced InAs nucleation and the dot growth. Ultrahigh-density InAs QDs with 8.5 × 10 11 cm −2 was obtained for As 2 molecular beam of 3.0 × 10 −5 Torr. The amount of InAs growth grown by As 2 was about three times higher than that by As 4 . Photoluminescence (PL) properties depended on InAs QD structures. The vacuum transport process between InAs MBD and SiO x sputtering was effective to improve the quality of InAs QDs on a SiO x film. Furthermore, strong PL intensity was obtained from InAs QDs in a SiO x matrix, fabricated by the vacuum transport process.

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Section: Experimental Methodsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 97%

Molecular beam deposition of high-density InAs quantum dots on SiO_x films

Makaino¹,

Tanaka²,

Yamaguchi³

2019

Jpn. J. Appl. Phys.

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“…An important parameter of a QD system is the strength of interaction of carriers localized in QDs with extrinsic centres, such as impurities and defects. To date, the influence of defects on the electrical and optical properties has been investigated only in InAs QDs embedded in a GaAs matrix [2][3][4][5][6][7][8][9][10]. It has been found that although during the growth of the sample containing strained QDs and its post-growth treatment shallow and deep level point [2][3][4][5][6][7][8] and extended [9,10] defects can be formed in the structure, including the very vicinity of the wetting layer and QDs, these defects exhibit only a slight influence on the recombination properties of the QDs.…”

Section: Introductionmentioning

confidence: 99%

“…To date, the influence of defects on the electrical and optical properties has been investigated only in InAs QDs embedded in a GaAs matrix [2][3][4][5][6][7][8][9][10]. It has been found that although during the growth of the sample containing strained QDs and its post-growth treatment shallow and deep level point [2][3][4][5][6][7][8] and extended [9,10] defects can be formed in the structure, including the very vicinity of the wetting layer and QDs, these defects exhibit only a slight influence on the recombination properties of the QDs. For example, it was found that an irradiation with protons to a dose of 10 14 cm −2 does not affect the exciton decay kinetics [8].…”

Section: Introductionmentioning

confidence: 99%

Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport

Шамирзаев

Gilinsky

Kalagin

et al. 2006

Semicond. Sci. Technol.

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The low-temperature steady-state and time-resolved photoluminescence (PL) from self-assembled InAs quantum dots (QDs) embedded in AlAs with various densities of growth-induced defects has been studied. In contrast to the system of InAs/GaAs QDs, a drastic decrease of the QD PL intensity and decay duration with the formation of relaxed dislocated clusters was observed. It is shown that this strong difference in the luminescence properties of the InAs/GaAs and InAs/AlAs QD systems arises from the very large exciton lifetimes in InAs/AlAs quantum dots, which are longer than the energy transfer time from the QDs to the nonradiative recombination centres of the dislocated clusters.

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