2002
DOI: 10.1063/1.1490153
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Competition between ferromagnetic metallic and paramagnetic insulating phases in manganites

Abstract: La 0.67 Ca 0.33 Mn 1Ϫx Cu x O 3 (xϭ0 and 0.15͒ epitaxial thin films were grown on the ͑100͒ LaAlO 3 substrates, and the temperature dependence of their resistivity was measured in magnetic fields up to 12 T by a four-probe technique. We found that the competition between the ferromagnetic metallic ͑FM͒ and paramagnetic insulating ͑PI͒ phases plays an important role in the observed colossal magnetoresistance ͑CMR͒ effect. Based on a scenario that the doped manganites approximately consist of phase-separated FM … Show more

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Cited by 163 publications
(80 citation statements)
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“…In this expression, T mod C is PI-FM transition temperature used in this model and near/ equal to T C , U 0 is taken as the energy difference for temperature well below T mod C . 12 So, the total resistivity in whole temperatures ranges can be written as…”
Section: Resultsmentioning
confidence: 99%
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“…In this expression, T mod C is PI-FM transition temperature used in this model and near/ equal to T C , U 0 is taken as the energy difference for temperature well below T mod C . 12 So, the total resistivity in whole temperatures ranges can be written as…”
Section: Resultsmentioning
confidence: 99%
“…Then the electrical resistivity of the system at any temperature is determined by the change of the FM volume fractions in both regions. According to Li et al, 12 the resistivity is formulated as…”
Section: Resultsmentioning
confidence: 99%
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“…2 (справа) приведена температурная зависимость электросопротивления для образца La 0.825 Sr 0.175 MnO 3 . Отметим, что температурный ход имеет характерный для большинства легированных манганитов вид и демонстрирует переход металл-диэлектрик при T MI = 307 K. В данной работе мы не будем рассматривать подробный анализ электросопро-тивления, так как в литературе имеется огромное количество работ подробного анализа электросопро-тивления манганитов с аналогичной температурной зависимостью [19][20][21][22]. Кратко отметим, что в высокотем-пературной парамагнитной области зависимость ρ(T ) носит полупроводниковый характер и может быть интерпретирована на основе концепции поляронов малого радиуса, представляющих собой электрон или дырку, движущиеся вместе с вызванной им деформацией кристаллической решетки.…”
Section: результаты и обсуждениеunclassified