Competing effects of Mn-doping and strain on electrical transport of NdNi1−xMnxO3(0 ⩽x⩽ 0.10) thin films

Chandra, Mahesh; Rana, Rakesh; Aziz, Fozia; Khare, Amit; Rana, D. S.; Mavani, K. R.

doi:10.1088/0022-3727/46/41/415305

Cited by 9 publications

(19 citation statements)

References 30 publications

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“…The NNMO/NGO films are coherently strained and the NNMO/YAO films have partially relaxed compressive strain. 20 Among NNMO/STO films, only x ¼ 0.02 film exhibits coherent strain whereas the other two films have partially relaxed strain as shown by the RSMs (Fig. 1).…”

Section: Resultsmentioning

confidence: 90%

“…At x ¼ 0.10, the MI transition disappears indicating an opening of charge-transfer gap, which takes place due to smaller size and electronic configuration of Mn 4þ at Ni-site. 20 The effect of Mn 4þ doping clearly dominates the effect of the compressive strain as indicated by the vanishing MI transition in the NNMO/YAO at x ¼ 0.10.…”

Section: Resultsmentioning

confidence: 99%

“…Two series of films, NNMO/NGO and NNMO/YAO, exhibit thermal hysteresis of resistivity at MI transition. 20 The thermal hysteresis of resistivity decreases with increasing Mn-doping. In spite of the absence of metallic state in the films with x ¼ 0.10, there is a negligible loop indicating a thermal hysteresis in the resistivity (Figs.…”

Section: Resultsmentioning

confidence: 99%

“…25,26 (Table I). 20 This drives the films in a state of enhanced inplane tensile strain with increasing x. The unit cell volume, in indirect manner, is a crude measure of oxygen vacancies present in RNiO 3 system.…”

Section: Resultsmentioning

confidence: 99%

“…The Mn-doping has systematic effects on the metallic conductivity and the temperature coefficient of resistance. 20 To enhance the understanding, it is also important to investigate the charge transport in the insulating state in detail. There are many reports on the transport mechanism in insulating state 9,21-24 of RNiO 3 system.…”

Section: Introductionmentioning

confidence: 99%

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Contrasting effects of doping on insulating and metallic states of NdNi1−xMnxO3 thin films

Chandra

Aziz

Tripathi

et al. 2014

Journal of Applied Physics

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We have deposited NdNi1−xMnxO3 (0 ≤ x ≤ 0.10) thin films on SrTiO3 (001), NdGaO3 (001), and YAlO3 (100) substrates and studied the effects of Mn-doping and strain on the charge transport. The majority of charge carriers are holes. Both the in-plane strain and the Mn-doping affect the electrical transport of the films. The metallic state completely vanishes at Mn-doping of x = 0.10. All the films, including x = 0, deposited on SrTiO3 are insulating throughout the temperature range. We find that the resistivity data of all the insulating films fit to two different models, i.e., variable range hopping and Arrhenius equation, in two different temperature regions. The mechanism of charge-transport in the insulating films changes from one type to another and the temperature range of fittings depend on the level of Mn-doping. The results and analyses clearly show that there are contrasting effects of Mn-doping in the metallic and the insulating regions: on one hand, the resistivity increases with increasing Mn-doping in the metallic region; and on the other hand, the hopping/activation of charge carriers get promoted in the insulating region.

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Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%