Compensation of sensitivity shift in piezoresistive pressure sensors using linear voltage excitation

Gakkestad, Jakob; Øhlckers, Per; Halbo, Leif

doi:10.1016/0924-4247(95)00988-8

Cited by 27 publications

(13 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It should also be noted from equations (1) and (3) that the sensitivity of the sensor has a nonlinear temperature dependence that needs to be compensated for. Several methods have been demonstrated for this purpose (for example [14,20]). …”

Section: Principle Of Operationmentioning

confidence: 99%

“…Furthermore, the piezoresistive coefficients are highly dependent on temperature [13], leading to a change in sensitivity when piezoresistive sensors are operated at fluctuating temperatures. While the temperature coefficient of sensitivity (TCS) can be compensated for [14], the limited temperature range of piezoresistive silicon accelerometers can only be addressed by eliminating the pn-junctions. Silicon-on-insulator (SOI) wafers can be utilized for this purpose.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Single-mask fabrication of high-G piezoresistive accelerometers with extended temperature range

Eklund¹,

Shkel²

2007

J. Micromech. Microeng.

View full text Add to dashboard Cite

Abstract. This paper presents a fabrication process in which all components of an in-plane piezoresistive accelerometer are fabricated simultaneously using a single mask. By dry-etching a silicon-on-insulator (SOI) wafer that has a specific resistivity, piezoresistors are defined and isolated from each other and from the bulk silicon without the pn-junctions normally required in piezoresistive sensors. In addition to simplifying the fabrication, the temperature range is also extended when compared to conventional piezoresistive accelerometers, due to the absence of pn-junctions. Singleaxis accelerometers, designed for an acceleration range of 1 G to 500 G with a sensitivity of 1 mV/G, were fabricated and tested, and linear output characteristics were demonstrated. The temperature performance was also characterized. The temperature coefficient of sensitivity (TCS) was 0.3%/℃ and the temperature coefficient of offset (TCO) was 20 mG/℃.

show abstract

Section: Principle Of Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Single-mask fabrication of high-G piezoresistive accelerometers with extended temperature range

Eklund¹,

Shkel²

2007

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…For example, although seasonal temperature changes may be partly compensated by packaging, temperature changes (abrupt fluctuations, in particular) is the main issue, as they may induce surface energy on the adsorption layer [53], alter the kinetics in DNA hybridization [54], change the configuration of adsorbed molecules [55] and cause significant signal deviation in measurement [47]. Numerous compensation methods have been proposed, such as the temperature-dependent current source [56], double-bridge design [57], the linear voltage excitation [58], bias current generator [59], and voltage-to-time converter [60]. Taken also into consideration the fabrication limitations in biosensor [48], development of simple, reliable signal conditioning is necessary.…”

Section: User Interfacementioning

confidence: 99%

Designing a reliable leak bio-detection system for natural gas pipelines

Batzias

Siontorou

Spanidis³

2011

Journal of Hazardous Materials

View full text Add to dashboard Cite

“…These methods can be differentiated as noninvasive [37] and invasive [22]. As noninvasive we mean technique consisting of the addition of different circuit elements in series or parallel to the bridge in order to change the bridge supply voltage due to the temperature variation, which produces a valid compensation.…”

Section: Joule Heatingmentioning

confidence: 99%

GMR Based Sensors for IC Current Monitoring

Reig

Cubells-Beltrán

2013

Giant Magnetoresistance (GMR) Sensors

View full text Add to dashboard Cite

Abstract. The Giant MagnetoResistance (GMR) effect is a magnetic coupling mechanism that can be obtained in multilayer structures of few nanometers thick. In these devices, and at room temperature, the resistance is a function of the external magnetic field, at optimal levels for being used as sensors. Since the GMR effect was reported, scientists and engineers have dedicated their effort to this topic. This way, after two decades, a a very good knowledge of the GMR underlying physics together with notable designs of GMR based devices are nowadays available. They were initially used in the read heads of hard drives, but the constant evolution that this technology has experienced has open new fields of application, mainly related to the measurement of small magnetic fields using miniaturized devices, such as biotechnology and microelectronics.Regarding the microelectronics case, these sensors can be potentially used in those scenarios that require a detection or measurement of nonintrusive power by the indirect measurement of the magnetic field.In this chapter, an overview to the current research regarding the application of GMR sensors in the measurement of electrical currents at the integrated circuit (IC) level is drawn. In this particular case is important to take account of particular parameters of the GMR devices such as the sensing structures, the geometric arrangement and implementation of the sensors, the considered linear range, undesired couplings, biasing, hysteresis, temperature drifts, ... We have also described some cases of success describin particular applications of these devices. Finally, some aspects related to the monolithic integration of GMR devices onto standard CMOS engineered chips are also considered in this chapter.

show abstract

Compensation of sensitivity shift in piezoresistive pressure sensors using linear voltage excitation

Cited by 27 publications

References 6 publications

Single-mask fabrication of high-G piezoresistive accelerometers with extended temperature range

Single-mask fabrication of high-G piezoresistive accelerometers with extended temperature range

Designing a reliable leak bio-detection system for natural gas pipelines

GMR Based Sensors for IC Current Monitoring

Contact Info

Product

Resources

About