Compensation of parasitic effects for a silicon tuning fork gyroscope

Günthner, Stefan; Egretzberger, Markus; Kugi, Andreas; Kapser, K.; Hartmann, B.; Schmid, U.; Seidel, H.

doi:10.1109/jsen.2006.874451

Cited by 38 publications

(19 citation statements)

References 12 publications

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“…[1][2][3] Among the different piezoelectric materials, AlN is the candidate that fulfills most of the requirements for this integration process. Its good mechanical, chemical, and dielectric properties, as well as the compatibility with complementary metal-oxide semiconductor technology, have determined its choice for academic research 4,5 and even device production in companies such as Avago, Epcos, Infineon, and Trikin.…”

Section: Introductionmentioning

confidence: 99%

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Hernando

Sánchez‐Rojas

González-Castilla

et al. 2008

Journal of Applied Physics

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In this paper, the electric field induced deformations of sputter-deposited piezoelectric aluminum nitride thin films sandwiched between electrodes on top of a silicon substrate are studied by numerical calculations and scanning laser interferometric measurements. In our calculations based on the finite element method, the results show the displacement of the top and bottom surfaces of both the thin film and the substrate, for either a free or a perfectly clamped structure. The confirmation that the bottom surface of the film is deformed reveals the limitations of techniques that only access the top surface, as well as the double-beam interferometric configuration, under specific conditions. In addition, the simulations demonstrate the dependence of the displacements on the size of the upper electrode and the contribution of the transverse piezoelectric coefficient d 31 to the features of the displacement profiles. A laser scanning vibrometry technique was used to measure deformations on the top surface with subpicometer vertical resolution. By comparing the calculated and the experimental displacement profiles, an advanced approach is discussed to obtain accurate quantitative information of both coefficients d 31 and d 33 .

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Section: Introductionmentioning

confidence: 99%

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Hernando

Sánchez‐Rojas

González-Castilla

et al. 2008

Journal of Applied Physics

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“…Thin film elements made of AlN are typically used in micromachined devices requiring mechanical excitation during operation, such as Coriolisbased gyroscopes (Günthner et al 2006), or as resonating components in high frequency MEMS (Dubois et al 2003). In the crystalline state AlN has a wide band-gap of 6.2 eV that makes it a very promising material for the use in optical devices operating in the ultraviolet spectral region (Gudovskikh et al 2004).…”

Section: Introductionmentioning

confidence: 99%

Etching behaviour of sputter-deposited aluminium nitride thin films in H3PO4 and KOH solutions

2008

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Aluminium nitride (AlN) reactively sputter deposited from an aluminium target is an interesting compound material due to its CMOS compatible fabrication process and its piezoelectric properties. For the implementation in micromachined sensors and actuators an appropriate patterning technique is needed to form elements made of AlN. Therefore, the influence of different sputtering conditions on the vertical etch rate of AlN thin films with a typical thickness of 600 nm is investigated in an etch mixture based on phosphoric acid. Under comparable conditions, such as temperature and concentration of the etchant, thin films with a high c-axis orientation are etched substantially slower compared to films with a low degree of (002) orientation. When a high c-axis orientation is present detailed analyses of the etched topographies reveal surface characteristics with a low porosity and hence, low roughness values. From temperature dependant etching experiments an activation energy of 800(: 30) meV is determined showing a reaction-controlled etching regime independent of sputter deposition conditions. For comparison, AlN films synthesized under the same conditions were etched in potassium hydroxide (KOH) at room temperature revealing comparable etching characteristics as a function of deposition parameters. Depending on the degree of (002) orientation the topography of the etched samples show a strong increase in surface roughness with time due to a selective etching behaviour between (002) and residual crystallographic planes.

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“…Among the different piezoelectric materials, AlN is an interesting candidate for this integration process. Its good mechanical, chemical and dielectric properties, as well as the compatibility with CMOS technology, have determined its choice [4,5]. A number of complex techniques have been used to determine AlN piezoelectric properties, such as the piezoelectric coefficients d 33 and d 31 [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Advanced determination of piezoelectric properties of AlN thin films on silicon substrates

Sanchez-Rojas

Hernando

Ababneh

et al. 2008

2008 IEEE Ultrasonics Symposium

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Compensation of parasitic effects for a silicon tuning fork gyroscope

Cited by 38 publications

References 12 publications

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Etching behaviour of sputter-deposited aluminium nitride thin films in H3PO4 and KOH solutions

Advanced determination of piezoelectric properties of AlN thin films on silicon substrates

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