Compensated donors in semi-insulating Cd1−xMnxTe:In crystals

Nykoniuk, Ye.; Solodin, S.; Zakharuk, Z. I.; Dremlyuzhenko, S. G.; Rudyk, B. P.; Fochuk, P.

doi:10.1016/j.jcrysgro.2018.08.013

Cited by 7 publications

(1 citation statement)

References 20 publications

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“…In particular, a large sp-d exchange interaction between the charge carriers and the magnetic ions leads to strong band splitting in Cd1-xMnxTe crystals, which results in the giant Faraday rotation and Zeeman splitting [1,6]. Recently, Cd1-xMnxTe alloy was proposed as a material for nuclear radiation detectors [7,8] due to its good electron transport properties and high resistivity [9,10].…”

Section: Introductionmentioning

confidence: 99%

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

Yuriychuk

Fochuk

Bolotnikov

et al. 2019

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI

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The structural, electronic and magnetic properties of Cd1-xMnxTe alloy in the zinc-blende (ZB) phase were studied within the framework of spin-polarized density functional theory using the generalized gradient approximation (GGA). We employed the GGA+ U SIC (GGA method plus self-interaction correction potential), which gives a better description of systems with strong Coulomb correlations of the d-electrons. In this paper, we first discuss implementation of the GGA+U method to the ground state calculations of pure CdTe and ferromagnetic MnTe. The alloys are modelled at selected compositions as ordered structures described in terms of periodically repeated supercells for the compositions of x = 0.25, 0.5, and 0.75. The compositional dependences of the lattice constant, electronic band structure and partial densities of states of the ferromagnetic Cd1-xMnxTe alloy were also studied. We estimated the spin-exchange splitting energies produced by the Mn 3d-states and determined the exchange constants for the conduction and valence bands of the alloy. The energy positions of the occupied and unoccupied Mn 3d-bands in the electronic structure of the ferromagnetic Cd1-xMnxTe alloy are also presented. Our calculations based on the GGA+ U SIC approach agree well with the available experimental data and other calculations.

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Section: Introductionmentioning

confidence: 99%

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

Yuriychuk

Fochuk

Bolotnikov

et al. 2019

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI

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High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals

Kopach

Kanak

et al. 2019

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI

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Mechanisms contributing to dark current across metal/CdMnTe/metal structures

Sklyarchuk

Fochuk

Solodin

et al. 2019

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI

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Studies of the electro-physical properties of n-type semi-insulating indium-doped Cd(Mn)Te crystals with a resistivity ~ (4-5)×10 10 Ohm×cm at T = 300 K were carried out. Structures with both ohmic (In/Cd(Mn)Te/In) and rectifying (Ni/Cd(Mn)Te/In) contacts were fabricated and tested. It was found that in the case of the Ni/Cd(Mn)Te/In structure, the charge transport can be explained by the generation of currents in the space-charge region and the spacecharge limited current (SCLC) at high voltages, while Ohm's law is valid only at the initial section of the volt-ampere (I-V) curve. Calculations of the dependence of the generation current on the voltage according to the Sah-Noyce-Shockley model were performed. For the In/Cd(Mn)Te/In structure, we observed the initial part of the I-V curve obeys Ohm's law, and the SCLCs with participation of deep centers (traps) in the semi-insulating crystal were observed at greater voltages. The concentration of deep centers (Nt ~ 7.4×10 10 cm -3 ) responsible for the trap mechanism in SCLC In/Cd(Mn)Te/In structures was calculated. The energy position Et1 of the deep level was determined (calculated from the valence band edge at Et1= 0.89-0.9 eV). We demonstrated that SCLC was the main mechanism limiting the operating voltage and, consequently, a major factor in the performance and use of Cd(Mn)Te-based ionizing radiation detectors with ohmic contacts.

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Compensated donors in semi-insulating Cd1−xMnxTe:In crystals

Cited by 7 publications

References 20 publications

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals

Mechanisms contributing to dark current across metal/CdMnTe/metal structures

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