Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center and NASA Electronic Parts and Packaging Program

Topper, Alyson D.; Campola, Michael J.; Chen, Dakai; Casey, Megan C.; Yau, Ka-Yen; Cochran, Donna J.; LaBel, Kenneth A.; Ladbury, Raymond L.; Mondy, Timothy K.; O'Bryan, Martha V.; Pellish, Jonathan A.; Wilcox, Edward P.; Wyrwas, Edward J.; Xapsos, M.A.

doi:10.1109/nsrec.2017.8115431

Cited by 6 publications

(7 citation statements)

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“…Finally, a fraction of them can be trapped in deep hole traps, inducing long term effects in the bulk with consequent alteration of the electrical characteristics of the electronic devices. 11,[16][17][18][19][20][21] Regarding the optical components for Space applications, a potential damage induced by radiation can be detrimental to the performances of the whole optical system. The typical radiationinduced effect consists of the transmittance loss due to the formation of charged defects (colour centres) and of network disorder increase.…”

Section: Introductionmentioning

confidence: 99%

Calliope 60Co gamma irradiation facility for space qualification at ENEA-casaccia research centre (Rome)

Cemmi¹,

Baccaro²,

Sarcina³

2019

PAIJ

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The radiation damage induced by hostile environment on optical and electronic components and devices underwent several studies since last decades. In order to evaluate the radiation damage on materials it is useful to irradiate them by energetic particles which simulate the radiation environment in which they will be used. The 60 Co Calliope facility, located at the ENEA-Casaccia Research Centre (Rome), is involved in radiation processing researches and qualifications on materials and devices for hostile radiation environment, such as nuclear plants, Space and High Energy Physics experiments. This paper aims to highlight the importance of the qualification and research activities for Space applications and the key role of the Calliope gamma irradiation facility in this field. Some experimental results and researches performed on irradiated optical coating materials and commercial glassy substrates (BK7-B, BK7-G18 and Suprasil 2B) suitable for Space applications are discussed. While BK7-B shows a significant transmittance loss in the whole visible and ultraviolet range even at low gamma absorbed dose, BK7-G18 and Suprasil 2B appear to be good candidates for applications also in extreme environment.

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Section: Introductionmentioning

confidence: 99%

Calliope 60Co gamma irradiation facility for space qualification at ENEA-casaccia research centre (Rome)

Cemmi¹,

Baccaro²,

Sarcina³

2019

PAIJ

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“…As can be seen from Tab. S4-S5 of the Supplementary Material, the npn power transistor Microchip TM 2N5154U3 exhibits considerable gain degradation at a dose rate of 50 mrad/s when biased at 80 V [117]. This is indicative of the impact radiation can have on devices designed to handle higher power levels.…”

Section: B Bjts and Hbtsmentioning

confidence: 99%

COTS Devices for Space Missions in LEO

Brunetti,

Campiti,

Tagliente

et al. 2024

IEEE Access

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In the framework of the NewSpace revolution, time-to-market and budget constraints drive the development of small and medium-sized satellites in Low Earth Orbit (LEO) orbit. The adoption of Commercial Off-the-Shelf (COTS) components represents the current trend to fulfill the NewSpace goals, given their low cost, wide product availability, small time-to-market, and the ability to integrate the most recent advancements in space applications. However, migrating from radiation-hardened (rad-hard) devices to COTS ones requires ensuring comparable reliability levels. To this end, an "upscreening" of the COTS devices and systems should be performed in compliance with widely adopted standard regulations, such as those used by ESA or NASA. In this paper, we review COTS components and systems, such as diodes, Bipolar Junction Transistors (BJTs), Field Effect Transistors (FETs), Operational Amplifiers (OPAMPs), memories, and Field Programmable Gate Arrays (FPGAs), proven-flight or ad-hoc tested for compliance with standard regulations. In conclusion, the most promising devices in terms of cost and radiation tolerances are identified, providing useful benchmarks for space engineers developing COTS-based innovative systems.

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“…For the TID case, it involves the radiation characterization, failure mechanism, and mitigation design, while most DDD studies only focus on the radiation appearances under neutron and proton experiments. Moreover, some previous works show that the TID effect could be influenced by neutron radiation in bipolar transistors [8]. However, it is a pity that the synergistic effect of DDD and TID in GaN HEMT has not been reported so far.…”

Section: Introductionmentioning

confidence: 99%

“…As the representative of the wide bandgap semiconductor devices, the gallium nitride high-electron-mobility transistor (GaN HEMT) has excellent electrical performance, hightemperature resistance, high power, and resistance to extreme radiation environments, which could meet the needs of new-generation spacecraft energy systems [1][2][3][4]. When a nuclear-powered spacecraft works in space, in addition to radiation damage caused by energetic particles, the comprehensive radiation environment with neutrons and gamma rays could also lead to performance degradation or even device failure of electronic systems by displacement damage effects (DDD) and total dose effects (TID) [5][6][7][8][9]. According to the reports [10,11], at a distance of 5.3 m from the 461 MW nuclear reactor core, normalized by the power, the neutron flux with an energy greater than 3 MeV is 2.13 × 10 8 n•cm −2 •s −1 •MW and an energy smaller than 0.4 MeV is 9.84 × 10 8 n•cm −2 •s −1 •MW.…”

Section: Introductionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center and NASA Electronic Parts and Packaging Program

Abstract: Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

Cited by 6 publications

References 1 publication

Calliope 60Co gamma irradiation facility for space qualification at ENEA-casaccia research centre (Rome)

Calliope 60Co gamma irradiation facility for space qualification at ENEA-casaccia research centre (Rome)

COTS Devices for Space Missions in LEO

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

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