Comparison on 6T, 5T and 4T SRAM cell using 22nm technology

Rollini, R.; Sampson, Jenyfal; Sivakumar, P.

doi:10.1109/iceice.2017.8191924

Cited by 6 publications

(2 citation statements)

References 13 publications

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“…• Architectural variations: Manufactures may optimize the SRAM structure in different ways to support the requirement [42]- [45]. Among different structures, the symmetric 6-Transistor (6T) SRAM structure is the most common one (Fig.…”

Section: A Sources Of Distinguishable Factorsmentioning

confidence: 99%

“…On the other hand, to suppress the noise (e.g., read disturbance, half-select disturbance, etc. ), other SRAM architecture such as 5T, asymmetric 6T, 7T, 8T, 9T, 10T structure is also available [42]- [45]. However, due to these configurations' asymmetric structure, each SRAM cell on the memory array may be biased to a specific logic at start-up.…”

Section: A Sources Of Distinguishable Factorsmentioning

confidence: 99%

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A Non-invasive Technique to Detect Authentic/Counterfeit SRAM Chips

Talukder¹,

Ferdaus²,

Rahman³

2021

Preprint

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Many commercially available memory chips are fabricated worldwide in untrusted facilities. Therefore, a counterfeit memory chip can easily enter into the supply chain in different formats. Deploying these counterfeit memory chips into an electronic system can severely affect security and reliability domains because of their sub-standard quality, poor performance, and shorter lifespan. Therefore, a proper solution is required to identify counterfeit memory chips before deploying them in mission-, safety-, and security-critical systems. However, a single solution to prevent counterfeiting is challenging due to the diversity of counterfeit types, sources, and refinement techniques. Besides, the chips can pass initial testing and still fail while being used in the system. Furthermore, existing solutions focus on detecting a single counterfeit type (e.g., detecting recycled memory chips). This work proposes a framework that detects major counterfeit static random-access memory (SRAM) types by attesting/identifying the origin of the manufacturer. The proposed technique generates a single signature for a manufacturer and does not require any exhaustive registration/authentication process. We validate our proposed technique using 345 SRAM chips produced by major manufacturers. The silicon results show that the test scores (F1 score) of our proposed technique of identifying memory manufacturer and part-number are 93% and 71%, respectively.

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Section: A Sources Of Distinguishable Factorsmentioning

confidence: 99%

Section: A Sources Of Distinguishable Factorsmentioning

confidence: 99%