Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structure

Lee, Ming Ling; Wang, Jer‐Chyi; Kao, Chiang; Chen, Hsiang; Lin, Chan Yu; Chang, Chih Ching; Mahanty, Rama Krushna; Lin, Ching-Fuh; Chang, Kang-Ming

doi:10.1016/j.ceramint.2017.12.239

Cited by 13 publications

(9 citation statements)

References 26 publications

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“…The fabricated samples’ sensitivity after Mg doping was 68.71, 37.74, 83.77, 72.55, and 38.75 mV/pH at Mg contents ranging from 0 to 5%, respectively, as presented in Figure 8 . The normalized C–V curves shift as the pH values increase, which is attributed to changes in oxide films’ capacity caused by changes in the number of binding sites available for H + and OH − on sensing membranes [ 33 ]. The incorporation of impurities improves the surface and interfacial material quality and increases the surface site density.…”

Section: Resultsmentioning

confidence: 99%

“…The change in the reference voltage might occur from lattice defects, which co for example, vacancies or dangling bonds caused by capturing groups of ions. The fects might be eliminated by controlling the parameters of the preparation method for the sensing membranes, such as the annealing temperature [15,27,73] and the d process [33,67], which result in the improvement of the drift voltage over time. In to study the long-term stability (drift) of the sensing membranes, each sample wa merged in a solution of pH 7 for 12 h. Figure 10 presents the drift rates of the EIS d based on Mg-doped ZnO nanorod sensing membranes doped at different contents ( Figure 10 shows that, among the samples doped with Mg, the EIS device with the 3 ZnO membrane exhibited the highest stability (0.218 mV/h), whereas the 2% M membrane had the lowest stability of 0.659 mV/h.…”

Section: The Undoped Zno and Mg-doped Zno Nanorod Sensing Performancementioning

confidence: 99%

“…They have been used widely in different types of applications due to their easy fabrication methods, biocompatibility, chemical stability, and important optical features, and could be utilised as transducers in the construction of biosensors [23][24][25][26][27]. Therefore, ZnO has been proven to be a pH-sensitive gate insulator for different types of sensors, such as EGFET [28,29], ISFET [30], LAPS [31], and EIS [19,20,27,32,33]. Since electrical transport in ZnO has a significant impact on sensors' sensitivity, monitoring the conductivity of ZnO is essential.…”

Section: Introductionmentioning

confidence: 99%

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Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte–Insulator–Semiconductor (EIS) Sensors

Al-Khalqi

Hamid

Al-Hardan

et al. 2021

Sensors

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For highly sensitive pH sensing, an electrolyte insulator semiconductor (EIS) device, based on ZnO nanorod-sensing membrane layers doped with magnesium, was proposed. ZnO nanorod samples prepared via a hydrothermal process with different Mg molar ratios (0–5%) were characterized to explore the impact of magnesium content on the structural and optical characteristics and sensing performance by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), and photoluminescence (PL). The results indicated that the ZnO nanorods doped with 3% Mg had a high hydrogen ion sensitivity (83.77 mV/pH), linearity (96.06%), hysteresis (3 mV), and drift (0.218 mV/h) due to the improved crystalline quality and the surface hydroxyl group role of ZnO. In addition, the detection characteristics varied with the doping concentration and were suitable for developing biomedical detection applications with different detection elements.

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Section: Resultsmentioning

confidence: 99%

Section: The Undoped Zno and Mg-doped Zno Nanorod Sensing Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte–Insulator–Semiconductor (EIS) Sensors

Al-Khalqi

Hamid

Al-Hardan

et al. 2021

Sensors

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“…Table 1 provides comparative data of the sensing parameters of drift rate, pH sensitivity, hysteresis voltage, glucose, and urea sensing for different EIS devices with TbY x O y 33 , CeO 2 34 , ZnO 35 , Sm 2 O 3 36 , Ti-doped ZnO 37 , and CeO with CF 4 plasma treatment 38 . The pH sensitivity, hysteresis, drift rate, glucose and urea sensing of the EIS device prepared with In 2 TiO 5 and incorporating a CF 4 plasma sensing membrane was superior.…”

Section: Resultsmentioning

confidence: 99%

Comparison Between Performances of In2O3 and In2TiO5-Based EIS Biosensors Using Post Plasma CF4 Treatment Applied in Glucose and Urea Sensing

Lin

Kao

Lin

et al. 2019

Sci Rep

Self Cite

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In this study, the effect of post-deposition tetrafluoromethane (CF 4 ) plasma treatment on the physical and electrical characteristics of an In 2 TiO 5 based electrolyte-insulator-semiconductor (EIS) sensor was investigated. Post-deposition CF 4 plasma treatment typically improved the crystalline structure and repaired dangling bonds at the grain boundaries. We used the newly fabricated device to detect several ions, such as sodium and potassium, which are essential for many biological processes. The as-deposited and CF 4 plasma treated In 2 TiO 5 sensing window with an EIS structure was also able to detect the pH of a solution, different alkali ions (Na + and K + ), glucose, and urea. The sensing membrane after a 60-sec CF 4 plasma treatment displayed improved biosensing characteristics, such as higher sensitivity (59.64 mV/pH), better drift rate, and a smaller hysteresis voltage of approximately 0.424 mV/h. The In 2 TiO 5 sensing membrane treated with CF 4 plasma is a promising material for use in EIS biosensing applications.

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“…The sensing membranes were used to accurately measure those values. [46], ZO [47], Sm 2 O 3 [48], Ti-doped ZO [49], and CeO treated with CF 4 plasma [50]. According to our previous study on zinc oxide (ZO) [47], the pH-sensing sensitivity of the ZO as-deposited film and the annealed film at 600 • C were 33.15 and 42.54 mV/pH, respectively; and the hysteresis voltages of the above ZO films were 35.10 and 7.37 mV, respectively.…”

Section: Sensing Characterizationmentioning

confidence: 99%

NH3 Plasma-Treated Magnesium Doped Zinc Oxide in Biomedical Sensors with Electrolyte–Insulator–Semiconductor (EIS) Structure for Urea and Glucose Applications

et al. 2020

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This study compared the sensing characteristics of ZnO (ZO) treated with ammonia (NH3) plasma for 1 min, 3 min, and 6 min, under the EIS structure. The measurement results revealed that, after 3 min of NH3 plasma treatment, the Mg-doped ZnO (MZO) sensing film had a high hydrogen ion sensitivity, linearity, hysteresis, and drift rate of 53.82 mV/pH, 99.04%, 2.52 mV, and 1.75 mV/h, respectively. The sensing film was used with sodium and potassium ion solutions, and it performed satisfactorily in sensing hydrogen ions. Additionally, we investigated the biomedical sensing properties of Mg-doped ZnO (MZO) sensing film with regard to urea, creatinine, and glucose solutions and found that the Mg-doped ZnO (MZO) sensing film treated with NH3 plasma for 3 min had the best properties for sensing urea, creatinine, and glucose. Specifically, with glucose, the sensing film achieved the best linearity and sensitivity and of 97.87% and 10.73 mV/mM, respectively. The results revealed that the sensing characteristics varied with the processing environment and are useful in the developing biomedical sensing applications with different sensing elements.

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Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structure

Cited by 13 publications

References 26 publications

Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte–Insulator–Semiconductor (EIS) Sensors

Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte–Insulator–Semiconductor (EIS) Sensors

Comparison Between Performances of In2O3 and In2TiO5-Based EIS Biosensors Using Post Plasma CF4 Treatment Applied in Glucose and Urea Sensing

NH3 Plasma-Treated Magnesium Doped Zinc Oxide in Biomedical Sensors with Electrolyte–Insulator–Semiconductor (EIS) Structure for Urea and Glucose Applications

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