Comparison of writing methods of single memory cell with volatile and nonvolatile memory functions

Kim, Hyungjin; Baek, Myung-Hyun; Hwang, Sungmin; Lee, Jong-Ho; Park, Byung‐Gook

doi:10.7567/apex.10.064201

Cited by 3 publications

(3 citation statements)

References 27 publications

(27 reference statements)

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“…Demand for memory devices with ultrafast switching, energy efficiency and dense storage capacity is continually increasing. Memory devices can be divided into two major categories: 'volatile' memory and 'non-volatile' memory [3]. When the power supply is cut off, volatile memory cannot recover the stored data.…”

Section: Introductionmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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Among the emerging memories, resistive switching (RS) based resistive random-access memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal structures, low power consumption, long endurance and retention characteristics, low fabrication cost, ultrafast switching, and CMOS compatibility. In recent years, several oxides, chalcogenides, polymers and their composites have been explored for RS devices. Many of these studies show a high resistance ratio of the OFF and ON states with good RS characteristics. Some of these studies also show the realization of multifunctional RS devices such as the simultaneous switching of resistance and magnetic states. In order to scale up RS-based RRAMs, a detailed understanding of the occurrence of RS is very much desirable. In this review, we provide an overview of the current understanding, recent advances and future outlook of RS-based RRAM devices along with fundamental concepts of the different types of RS, and conventional as well as novel measurement techniques which are being used to characterize RS devices. Observations of RS in different materials are presented, and RS mechanisms, such as the valence change mechanism and electrochemical metallization memory, are discussed in detail. An overview of multifunctional RS devices and the main challenges faced in scaling up RS devices is also presented.

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Section: Introductionmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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“…Moreover, the drain current difference between the two pulses can be interpreted as the sensing margin of 1T-DRAM operation. 6,23,24) The inset of Fig. 4 indicates that the sensing margin of the FD polysilicon transistor was about 400 μs.…”

Section: Discussionmentioning

confidence: 99%

Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices

Baek

Jang

Kim

et al. 2019

Jpn. J. Appl. Phys.

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In this paper, we investigate the floating body effect (FBE) in fully depleted polysilicon-body ultrathin-body MOSFETs. Generally, the FBE cannot occur in a fully depleted body. However, we demonstrate that an FBE-like phenomenon can be observed in fully depleted polysilicon-body MOSFETs due to the grain boundaries of the polysilicon. To analyze this, devices with various conditions were fabricated and measured. As a result, we may argue that generated holes can be trapped at grain boundaries, which causes an FBE-like phenomenon. Based on this, we expect that thin-polysilicon devices can be utilized for various applications such as 1T-DRAM or synaptic devices.

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“…STT-MRAM has a drawback of reliability, while PCM has a disadvantage of an extensive write latency. Therefore, an alternative of a nonvolatile memory device for the next generation has been proposed by researchers in the form of resistive random-access memory (RRAM) devices with the advantages of low power consumption, high scalability, simple structure, easy fabrication, small size, and low cost. ,,− ,,,,− Applications of RRAMs include but are not limited to aerospace, chaotic circuits, − neuromorphic computing, ,− memory devices, ,,− ,,− ,− and logical circuit displays. − RRAMs are usually fabricated as a vertical device with a functional layer of an insulator/semiconductor sandwiched between two metallic electrodes; however, it can also have a planar structure. − RRAMs can be further classified into nonvolatile and volatile memory devices on the basis of applied electric field, because nonvolatile memories can retain data even without the application of an external power supply, while volatile memories cannot retain their stored data in the absence of applied voltage. − RRAMs usually operate reversibly with...…”

Section: Introductionmentioning

confidence: 99%

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Rehman

Kim

et al. 2021

ACS Appl. Electron. Mater.

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Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of leaving adverse effects on the environment due to the use of toxic and nondegradable functional materials abundantly used in various electronic devices. The use of biomaterials in electronic devices with attractive properties is by far the best solution for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Biomaterials are environmentally friendly and biocompatible with the added advantages of easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This Review targets the characteristics, advancements, role, limitations, and prospects of using biomaterials as the functional layer of a resistive random-access memory (RRAM) device with a primary focus on the electronic properties of bio-RRAMs. Among the available memory devices, RRAMs have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. Applications of using biomaterial-based RRAMs have also been discussed including mimicking the human brain, fabricating wearable memory devices, and implanting bio-RRAMs. The motivation behind this work is to promote the use of biomaterials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic industry.

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Comparison of writing methods of single memory cell with volatile and nonvolatile memory functions

Cited by 3 publications

References 27 publications

Advances in resistive switching based memory devices

Advances in resistive switching based memory devices

Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

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