Comparison of Volume and Integrated P-I-N Modulators in Millimeter Wave Range

Koshevaya, S.; Moroz, I.; Grimalsky, V.; Tecpoyotl-Torres, M.; Escobedo-Alatorre, J.; Sánchez-Mondragón, J.

doi:10.1007/s10762-005-3437-7

Int J Infrared Milli Waves

2005

DOI: 10.1007/s10762-005-3437-7

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Comparison of Volume and Integrated P-I-N Modulators in Millimeter Wave Range

S. Koshevaya¹,

I. Moroz

V. Grimalsky

et al.

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2021

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“…Introduction. For switching of the microwave electromagnetic field p-i-n-diodes are used [1,2]. The electromagnetic field is controlled by changing the concentration of the charge carriers (electrons and holes) in the active region (i-region) using a control current.…”

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“…The distribution of the charge carriers concentration is the basic characteristic of the microwave switches. To estimate the value of the accumulated charge in the active region, in particular, the hydrodynamic models of plasma dynamics are widely used [1][2][3]. The mathematical model of plasma dynamics is based on a nonlinear system of partial differential equations, for the analysis of which a number of approximations are used.…”

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“…The mathematical model of plasma dynamics is based on a nonlinear system of partial differential equations, for the analysis of which a number of approximations are used. In particular, the approximation of ambipolar diffusion (self-consistent field mode) [1][2][3] does not take into account the effects of plasma heating [1], etc. This approach allows one to obtain linearized mathematical models.…”

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Simulation of the Charge Carriers Distribution in the Active Region of the P-I-N-Diodes by the Perturbation Theory Methods

Bomba¹,

Moroz²

2021

mcm-tech

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A mathematical model of the electron-hole plasma stationary distribution in the active region (i-region) of p-i-n-diodes in the dif-fusion-drift approximation is proposed. The model is represented in the form of a nonlinear singularly perturbed boundary value prob-lem for the system of equations of the electron-hole currents conti-nuity, the Poisson equation and the corresponding boundary condi-tions. The decomposition of the nonlinear boundary value problem of modeling the stationary distribution of charge carriers in the plasma of p-i-n-diodes is carried out on the basis of the solutions asymptotic representation. The model problem is reduced to a se-quence of the linear boundary value problems with a characteristic separation of the main (regular) components of the asymptotics and a boundary corrections. It was found that the formulation of the problem for finding the zero term of the asymptotics regular part coincides with the classical formulation of the p-i-n-diodes charac-teristics modeling problem, which is carried out in the approxima-tion of the ambipolar diffusion (approximation of a self-consistent electrostatic field).The proposed mathematical model and the method of its linearization make it possible to determing the main components in the diffusion-drift process and to study their role. For example, it becomes possible to study (including by analytical methods) the behavior of plasma in the p-i-, n-i-contacts zones. The results of the study are aimed at developing methods for de-signing p-i-n-diode structures, used, in particular, as active ele-ments of the signals switches of a microwave data transmission systems and the corresponding protective devices.

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Simulation of the Charge Carriers Distribution in the Active Region of the P-I-N-Diodes by the Perturbation Theory Methods

Bomba¹,

Moroz²

2021

mcm-tech

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The Optimization of the Shape and Size of the Injection Contacts of the Integrated P-I-N-Structures on the Base of Using the Conformal Mapping Method

Bomba

Moroz

Boichura

2021

RIC

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Context. P-i-n-diodes are widely used in a microwave technology to control the electromagnetic field. The field is controlled by the formation of an electron-hole plasma in the region of an intrinsic semiconductor (i-region) under the influence of a control current. The development of control devices on p-i-n-diodes has led to the emergence of integral p-i-n-structures of various types, the characteristics of which (for example, switching speed, switched power level, etc.) exceed the similar characteristics of volume diodes. The properties of p-i-n-structures are determined by a number of processes: the diffusion-drift charge transfer process, the recombination-generation, thermal, injection, and the so on. Obviously, these processes should be taken into account (are displayed) in the mathematical model of the computer-aided design system for control devices of a microwave systems. Integrated process accounting leads to the formulation of complex tasks. One of them is the task of optimizing the shape, geometric dimensions and placement of the injected contacts (an active region). Objective. The goal of the work is the development of a mathematical model and the corresponding software of the process of a microwave waves interaction with electron-hole plasma in an active region of the surface-oriented integral p-i-n-structures with ribbon-type freeform contacts to optimize an active region shape and its geometric dimensions. Method. The main idea of the developed algorithm is to use the conformal mapping method to bring the physical domain of the problem to canonical form, followed by solving internal boundary value problems in this area for the ambipolar diffusion equation and the wave equation using numerical-analytical methods (the finite difference method; partial domains method using projection boundary conditions similar to the Galerkin method). The optimization algorithm is based on a phased solution of the following problems (the shape and geometric dimensions of the active region are specified at each stage): a computational grid of nodes for the physical regions of the problem is being found, in an active region the carriers concentration distribution is being determined and the energy transmitted coefficient in the system under study is being calculated, which is used in the proposed optimization functional. The extreme values of the functional are found by the uniform search method. Results. The proposed mathematical model and the corresponding algorithm for optimizing the shape and geometric dimensions of the active region (i-region) of integrated surface-oriented p-i-n-structures expands the tool base for the design of semiconductor circuits of microwave frequencies (for example, similar to CST MICROWAVE STUDIO). Conclusions. An algorithm has been developed to optimize the shape and geometrical dimensions of the active region of integrated surface-oriented p-i-n-structures with in-depth contacts intended for switching millimeter-wave electromagnetic signals. The universality of the algorithm is ensured by applying the method of conformal transformations of spatial domains. The example of the application of the proposed algorithm to search for the optimal sizes of wedge-shaped (in cross-section) contacts of silicon structures is considered.

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Comparison of Volume and Integrated P-I-N Modulators in Millimeter Wave Range

Cited by 2 publications

References 4 publications

Simulation of the Charge Carriers Distribution in the Active Region of the P-I-N-Diodes by the Perturbation Theory Methods

Simulation of the Charge Carriers Distribution in the Active Region of the P-I-N-Diodes by the Perturbation Theory Methods

The Optimization of the Shape and Size of the Injection Contacts of the Integrated P-I-N-Structures on the Base of Using the Conformal Mapping Method

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