Comparison of transmission probabilities calculated by Monte Carlo simulation and analytical methods

Szwemin, P; Niewiński, M.

doi:10.1016/s0042-207x(02)00225-7

Cited by 12 publications

(4 citation statements)

References 8 publications

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“…The accuracy of this equation has been verified by Monte Carlo simulations 20 and this expression is reported to be better than 0.1 % for 0 e L e 5, a range common to Knudsen effusion studies. 21 As noted in the Introduction, silicon monoxide is expected to have a low evaporation coefficient.…”

Section: Vapor Pressure Calculationmentioning

confidence: 70%

Vapor Pressure of Silicon Monoxide

Ferguson

Nuth

2008

J. Chem. Eng. Data

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Silicon monoxide is a material that is used extensively in the glass and metallurgical industries. In addition, silicon monoxide is also particularly important to the field of astrophysics where it is theorized to play a vital role in the production of metal silicate dust grains in the condensing outflows of dying stars. In this work, the evaporation coefficients and vapor pressure of commercially available amorphous silicon monoxide were measured over the temperature range (1301 to 1519) K using a Knudsen effusion cell and a commercial, thermogravimetric balance. A second- and third-law analysis of the vapor pressure data yielded (351 ± 11) and (359.1 ± 2.0) kJ·mol−1 for the enthalpy of the vaporization reaction at 298.15 K, respectively. It is also shown that a thermodynamic assessment of silicon monoxide vapor pressure that has been used in the modeling of astrophysical condensation at 1000 K and below greatly overpredicts silicon monoxide vapor pressure.

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Section: Vapor Pressure Calculationmentioning

confidence: 70%

Vapor Pressure of Silicon Monoxide

Ferguson

Nuth

2008

J. Chem. Eng. Data

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“…R ads,los − R des,los + R ads,r os − R ads,r os (31) If the surface concentration on the los is assumed to be homogeneous, i.e., no concentration gradient on los, owing to mass balance, the rate of net adsorption on that surface would be equal to the surface flow rate (see Fig. 7):…”

Section: Modelingmentioning

confidence: 99%

“…Column one shows the values calculated by the Knudsen formula 1 , column two presents the values of DeMarcus taken from [29], column three are values of Berman taken from [30] and column four are Monte-Carlo simulation results reported by [31]. The last two columns are the values calculated in this work.…”

Section: Sole Knudsen Flow Casementioning

confidence: 99%

An alternative procedure for modeling of Knudsen flow and surface diffusion

Argönül¹,

Keil²

2008

Per. Pol. Chem. Eng.

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An alternative procedure for the calculation of impingement rate distribution and simultaneously the transmission probability in pores under Knudsen diffusion conditions is introduced. It is based on a combination of the finite difference method and a projection approach. Pore entrance and exit effects, and the influence of the pore length on diffusive fluxes are investigated. Later on, it is applied for a simultaneous Knudsen and surface flow system. In the model, the equation system is built without the independent flow and adsorption-desorption equilibrium assumptions. For the conditions investigated, the results indicate that if the surface flow rate is substantial, the independent flow and adsorption equilibrium assumptions become improper estimates for the behaviour of the system. The surface and gas flow rates, the impingement rate distribution and the surface coverage behave much more complex than the characteristics found with such assumptions. KeywordsKnudsen flow · surface diffusion · equilibrium assumption · cylindrical pore · projection approach Acknowledgement One of the authors would like to thank to Mr. Erkan Aksoy and Mr. Denis Chaykin for their comments concerning mathematical calculations.

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“…The accuracy of this equation has been verified by Monte Carlo simulations, 20 and this expression is reported to be better than 0.1 % for 0 ≤ L ≤ 5, a range common to Knudsen effusion studies. 21 As noted in the Introduction, silicon monoxide is expected to have a low evaporation coefficient.…”

Section: ■ Vapor Pressure Calculationmentioning

confidence: 75%

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

Ferguson

Nuth

2012

J. Chem. Eng. Data

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The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 ± 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 ± 25) kJ·mol–1 and (363.6 ± 4.1) kJ·mol–1, respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

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Comparison of transmission probabilities calculated by Monte Carlo simulation and analytical methods

Cited by 12 publications

References 8 publications

Vapor Pressure of Silicon Monoxide

Vapor Pressure of Silicon Monoxide

An alternative procedure for modeling of Knudsen flow and surface diffusion

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

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