Comparison of thermoelectric properties of nanostructured Mg2Si, FeSi2, SiGe, and nanocomposites of SiGe–Mg2Si, SiGe–FeSi2

Nozariasbmarz, Amin; Roy, Palash; Zamanipour, Zahra; Dycus, J. Houston; Cabral, Matthew J.; LeBeau, James M.; Krasiński, Jerzy S.; Vashaee, Daryoosh

doi:10.1063/1.4966138

Cited by 42 publications

(42 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SiGe has the band gap of 0.9 eV which is the reason for its significant Seebeck coefficient and low thermal [188,189] and by only reducing the lattice thermal conductivity their thermoelectric properties can be optimized. The reduction in the thermal conductivity was reported by the addition of silicide nanoinclusions to SiGe alloy as compared to the single-phase SiGe alloy [190]. The power factor is maintained or increased by these nano-inclusions and by the reduction of thermal conductivity, zT value reached to 1.3 in Si 0.…”

Section: Sige Alloysmentioning

confidence: 95%

“…The power factor is maintained or increased by these nano-inclusions and by the reduction of thermal conductivity, zT value reached to 1.3 in Si 0. 88 Ge 0.12 -Mg 2 Si nanocomposite at 950°C [190]. Peak zT of 0.73 was obtained in Boron-doped Si 80 Ge 20 with SiO 2 nano-inclusions due to the reduction in thermal conductivity and high values of Seebeck coefficient [191].…”

Section: Sige Alloysmentioning

confidence: 96%

“…Such high zT resulted from Figure 15. Temperature dependence of zT for recently developed efficient SiGe alloy thermoelectric [190,191,89].…”

Section: Half-heusler Alloysmentioning

confidence: 99%

See 2 more Smart Citations

Odyssey of thermoelectric materials: foundation of the complex structure

et al. 2018

View full text Add to dashboard Cite

Growing energy crises and pollution are the major issues of the modern world. The thermoelectric concept seems to be the promising solution to deal with these problems, because of the ability of thermoelectric materials to convert waste heat into electricity without adding more pollution to the atmosphere. The development of thermoelectric materials (TE) is driven by fundamental interest and their potential applications. To replace the conventional techniques, the figure of merit (zT) of the thermoelectric materials should be higher than 2 for power generation and greater than 3 for cooling. Recently, there have been significant advances in enhancing the figure of merit of thermoelectric materials and also to find new materials for the thermoelectric purpose. Low thermal conductivity is the key for a promising thermoelectric material that can be achieved through the complex structures. This review provides insights into the recent advancements in improving the efficiency of thermoelectric systems, complex nature of thermoelectric materials, with a concise introduction to preparative approaches for thermoelectric (TE) materials.

show abstract

Section: Sige Alloysmentioning

confidence: 95%

Section: Sige Alloysmentioning

confidence: 96%

See 1 more Smart Citation

Odyssey of thermoelectric materials: foundation of the complex structure

et al. 2018

View full text Add to dashboard Cite

show abstract

“…This work has stimulated many experimental works in exploiting silicide nanoparticles as phonon scattering sources. For instance, Mg 2 Si and FeSi 2 nanoinclusions in SiGe matrix showed the reduced thermal conductivity compared to the single‐phase SiGe alloy, and hence the maximum ZT of 1.3 . Furthermore, the Si/WSi 2 nanocomposites showed 40% reduction in lattice thermal conductivity and the ZT enhancement of 30% …”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Bulk Yttrium Silicide (YSi2) Fabricated by Arc Melting and Spark Plasma Sintering

Wongprakarn

Pinitsoontorn

Tanusilp

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

Yttrium silicide (YSi 2 ) nanoparticles in SiGe are reported to enhance the thermoelectric figure-of-merit (ZT) to the recorded value (%1.81). However, the thermoelectric properties of bulk YSi 2 has never been reported. In this work, the thermoelectric properties of YSi 2 is studied for the first time. The bulk YSi 2 is fabricated by arc melting highly pure Si and Y raw materials. The ingot is crushed to powder and compacted to form a highly dense pellet by spark plasma sintering. By optimizing the processing parameters, the single phase with the AlB 2 -type structure (P6/mmm) is formed. The Hall measurements show that YSi 2 exhibit a metallic-like behavior with a very high electron concentration. This result in the thermoelectric properties with a very large electrical conductivity (%18 Â 10 5 Ω À1 m À1 ) but a small Seebeck coefficient (À26 mV K À1 ) at room temperature, and decrease with temperature. The thermal conductivity is around 14-19 W m À1 K À1 for all temperature range. The maximum ZT value is 0.026 at 423 K.

show abstract

“…(2)(3)(4) β-FeSi 2 has a large optical absorption coefficient (α > 10 5 cm −1 at 1.5 eV ) and a direct band gap of 0.85-0.87 eV. (5)(6)(7) β-FeSi 2 thin films can be epitaxially grown on Si substrates with small lattice mismatches of 2-5%.…”

Section: Introductionmentioning

confidence: 99%

Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi2/n-Si Photodiodes

2018

Sensors and Materials

View full text Add to dashboard Cite

Keywords: p-Si/i-β-FeSi 2 /n-Si photodiode, responsivity, quantum efficiencyIn this study the responsivity and quantum efficiency of p-Si/i-β-FeSi 2 /n-Si doubleheterostructure photodiodes and p-Si/i-Si/n-Si photodiodes are investigated by self-developed analytical methods. The dark current densities of both β-FeSi 2 and Si p-i-n photodiodes under the reverse bias condition are calculated by solving the diffusion current densities of minority carriers. The photocurrent densities of both p-i-n photodiodes under illumination with reverse bias are mainly calculated by solving the drift current densities in the depletion regions. When the β-FeSi 2 p-i-n photodiode incident wavelength, λ, is less than 0.6 µm, the magnitudes of responsivity and quantum efficiency are almost zero for different intrinsic thicknesses. The maximum responsivity, R = 0.65 A/W, and quantum efficiency, η = 65%, are both at λ = 1.2 µm and the intrinsic β-FeSi 2 layer thickness is 100 µm. The calculated responsivity of the Si p-i-n photodiode is consistent with the reported studies. Therefore, the analysis methods and results are valid in this work. These results indicate the high applicability of β-FeSi 2 to near-infrared photodiodes integrated with Si. Therefore, the p-Si/i-β-FeSi 2 /n-Si photodiode is a new highefficiency light sensor device applicable to optical fiber communications.

show abstract

Comparison of thermoelectric properties of nanostructured Mg₂Si, FeSi₂, SiGe, and nanocomposites of SiGe–Mg₂Si, SiGe–FeSi₂

Cited by 42 publications

References 34 publications

Odyssey of thermoelectric materials: foundation of the complex structure

Odyssey of thermoelectric materials: foundation of the complex structure

Thermoelectric Properties of Bulk Yttrium Silicide (YSi2) Fabricated by Arc Melting and Spark Plasma Sintering

Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi2/n-Si Photodiodes

Contact Info

Product

Resources

About