Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide

Musschoot, Jan; Deduytsche, Davy; Poelman, Hilde; Haemers, Johan; Meirhaeghe, R. L. Van; Berghe, S. Van den; Detavernier, Christophe

doi:10.1149/1.3133169

Cited by 71 publications

(87 citation statements)

References 25 publications

(38 reference statements)

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“…When electronically excited states return to the ground state, they emit their energy as electromagnetic radiation, which can be measured using optical emission spectroscopy (OES). 42,46,47,52,119,137,138,148,223,237,271,289,[301][302][303] This excitation process accounts for the vacuum ultraviolet (VUV) to visible emission by the plasma as shown in the OES spectra of O 2 can be easily used to extract information about the species present in the plasma as well as about the chemical and physical processes occurring both within the plasma and at the surface. Measuring the visible emission of the plasma also provides many opportunities for plasmaassisted ALD in terms of process monitoring and optimization.…”

Section: à3mentioning

confidence: 99%

“…It has been reported that, for some materials and applications, plasma-assisted ALD affords better material properties than thermal ALD in terms of, for example, film density, 166,167,187,207,214,227,228 impurity content, 120,162,229,241,245,271,290,294 and electronic properties. 30,31,50,68,134,135,154,207,208,211,228,229,242,272,290,294,319 In most cases, these improved material properties are a result of the high reactivity provided by the plasma, which will be addressed in more detail below.…”

Section: A Improved Materials Propertiesmentioning

confidence: 99%

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Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

717

536

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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Section: à3mentioning

confidence: 99%

Section: A Improved Materials Propertiesmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

717

536

View full text Add to dashboard Cite

show abstract

“…Over the years, various preparation approaches have been developed for VO x thin films, such as sol-gel, 12 spray pyrolysis, 13 electrodeposition, 14 evaporation, 15 magnetron sputtering, 16 pulsed laser deposition, 17 chemical vapor deposition, 18 and atomic layer deposition (ALD). 6,8,[19][20][21][22][23][24][25][26][27][28][29][30][31][32] Among these approaches, ALD is of particular interest for preparing thin films. ALD employs alternate saturated self-limiting surface chemistry reactions, and allows one to deposit thin films in a well-controlled layer-by-layer fashion.…”

mentioning

confidence: 99%

“…[34][35][36] ALD of VO x has been reported using several types of vanadium precursors. Vanadyl triisopropoxide was a commonly used vanadium precursor, 6,8,[19][20][21][22][23] and was applied for both thermal (with water 6,[19][20][21] or ozone 8,22 ) and plasma-enhanced 23 ALD processes. A similar precursor, vanadium n-propoxide, could also be used along with acetic acid to produce ALD V 2 4 ] was described with water or ozone for depositing VO x thin films.…”

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confidence: 99%

Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

et al. 2016

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Atomic layer deposition (ALD) of vanadium oxide (VO x ) thin films, using tetrakis(dimethylamino)vanadium as the vanadium precursor, is comprehensively reported in this work. The vanadium precursor is highly volatile and can be used at room temperature for deposition. Either H 2 O or O 3 can be used as the coreactant for depositing VO x at 50-200°C. However, partial precursor decomposition is suggested for the deposition temperature higher than 160°C. The as-deposited VO x films are pure, smooth, and amorphous, and can be crystallized into monoclinic VO 2 phase by postdeposition annealing under N 2 ambient. The minimum annealing temperature for film to crystallize is found, by in situ high-temperature X-ray diffraction experiments, at around 550-600°C. In situ quartz crystal microbalance experiments are performed to further analyze the surface reaction mechanism involved in this ALD process.

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“…V 2 O 5 powders can be obtained by various physical and chemical methods, such as CVD, [2][3][4] hydrothermal method, [1,3,5] spray pyrolysis, [6] sol-gel, [7][8][9] co-precipitation, [10] and microwave plasma-torch method, [11] etc. Chemical vapor synthesis, also known as CVD or chemical vapor condensation (CVC), [12][13][14] is an alternative method for the direct synthesis of nanoparticles.…”

mentioning

confidence: 99%

Chemical Vapor Synthesis and Physico‐chemical Properties of V₂O₅ Nanoparticles

Chin

Park

et al. 2012

Chemical Vapor Deposition

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In the field of heterogeneous catalysts, nanometer-size transition metal oxides are of great interest. In particular, vanadium oxide-based materials, including vanadium pentoxide (V 2 O 5 ) and vanadium phosphates, are catalysts for the mild oxidation of hydrocarbons and alcohols.[1] To date, V 2 O 5 has attracted increasing interest for its potential applications as catalysts, sensors, and electrodes. V 2 O 5 powders can be obtained by various physical and chemical methods, such as CVD, [2][3][4] hydrothermal method, [1,3,5] spray pyrolysis, [6] sol-gel, [7][8][9] co-precipitation, [10] and microwave plasma-torch method, [11] etc. Chemical vapor synthesis, also known as CVD or chemical vapor condensation (CVC), [12][13][14] is an alternative method for the direct synthesis of nanoparticles. The principle advantages of the reactions in the gas phase are, very short process times, and nanometer-scale powders of high purity with a narrow particle size distribution. The particle morphology, crystalline phase, and surface chemistry of thermally decomposed particles can be controlled by regulating the precursor composition, reaction temperature, pressure, solvent property, and aging time. [15,16] In a typical CVC process, the precursor solution is atomized into an aerosol reactor (electric furnace) where droplets undergo solvent evaporation and solute precipitation within the droplets, which are then dried. In a typical thermal decomposition process, the precursor solution was atomized into an aerosol reactor, where droplets underwent solvent evaporation and solute precipitation within the droplets, which were then dried, followed by thermolysis of the precipitates at higher temperatures, and finally sintering to form the final particles.[15]In the CVC process, the synthesis temperature is one of the most important factors for determining the particle morphology, such as the crystal phase, size, specific surface area, surface composition, and chemical state. [15,17] In this study, V 2 O 5 nanoparticles were obtained by the thermal decomposition of a vanadium oxytriethoxide (VOTE) solution. The detailed microstructural characteristics of the thermally decomposed nanoparticles were examined as a function of the synthesis temperatures (500-1300 8C). Figure 1a shows X-ray diffraction (XRD) patterns of the V 2 O 5 nanoparticles prepared at each synthesis temperature. The XRD patterns of the V 2 O 5 samples synthesized at 900, 1100, and 1300 8C showed similar patterns with different peak intensities, and indicated a single-Shcherbinaite phase with an orthorhombic structure (JCPDS Card No. 41-1426) and lattice parameters of a ¼ 1.1516 nm, b ¼ 0.332 nm, and c ¼ 0.43727 nm. [8,10] In addition, the peak intensities of the V 2 O 5 samples increased with increasing synthesis temperature to 900 and 1300 8C, indicating enhanced crystallization. The peaks (001) intensity became higher and the peak shape narrower, indicating an increase in V 2 O 5 crystallite or grain size, which was calculated from the line broadening of (001) dif...

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Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide

Cited by 71 publications

References 25 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

Chemical Vapor Synthesis and Physico‐chemical Properties of V₂O₅ Nanoparticles

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Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide

Cited by 71 publications

References 25 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

Chemical Vapor Synthesis and Physico‐chemical Properties of V2O5 Nanoparticles

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Chemical Vapor Synthesis and Physico‐chemical Properties of V₂O₅ Nanoparticles