Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell

Minbashi, Mehran; Omrani, MirKazem; Memarian, Nafiseh; Kim, Dae-Hwan

doi:10.1016/j.cap.2017.06.003

Cited by 75 publications

(20 citation statements)

References 46 publications

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“…The complete set of measured EQEs of the different devices is displayed in Figure S2, showing the gradual collection efficiency improvement. This specific behavior is recurrently reported when BSF layers are used regardless of the PV technology, such as in silicon solar cells by introducing boron‐based BSF, 11 in CIGS with the Ga‐gradient, 14 or even in kesterite theoretical studies have shown how the introduction of a p‐Si layer would efficiently act as BSF 42 . Intriguingly, also in Figure 3, the EQE measured under reverse bias voltage (−1 V) confirms a remarkable improvement in collection efficiency, likely related to lower recombination at the rear interface for the CuGa containing sample, which could be directly associated with the observed morphology improvement as well as the fact of having a passivating layer at the back side.…”

Section: Resultsmentioning

confidence: 69%

Rear interface engineering of kesterite Cu₂ZnSnSe₄ solar cells by adding CuGaSe₂ thin layers

Giraldo

Fonoll‐Rubio

Jehl

et al. 2020

Progress in Photovoltaics

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Kesterite Cu2ZnSn(S,Se)4 thin film technology has been thoroughly investigated during the last decade as a promising solution in the field of low‐cost, sustainable, and environmental‐friendly photovoltaic technologies. However, despite efforts to boost kesterite solar cells performance by numerous strategies, the efficiencies remain stagnant around 13%. Some commonly observed issues in this technology refer to recombination events due to the likely presence of defects and, largely in line with the latest, the presence of voids and poor morphologies at the rear interface. This work, partly inspired by the copper indium gallium selenide (CIGS) technology and the use of wide‐bandgap Ga‐rich region as back surface field (BSF), focuses on an innovative approach using ultrathin CuGa layers at the rear interface to promote the formation of wide‐bandgap CuGaSe2, acting as an efficient electron reflector or BSF, and to function as an effective interlayer improving the kesterite crystallinity at the back interface. Kesterite Cu2ZnSnSe4 devices fabricated with added CuGa layers show a general increase in photovoltaic parameters and a significantly enhanced collection efficiency compared with reference devices without CuGa. This strategy proves to be successful, for not only passivating but also for improving the Mo/kesterite interface morphology, preventing to a large extent the presence of voids at the back region of the absorber.

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Section: Resultsmentioning

confidence: 69%

Rear interface engineering of kesterite Cu₂ZnSnSe₄ solar cells by adding CuGaSe₂ thin layers

Giraldo

Fonoll‐Rubio

Jehl

et al. 2020

Progress in Photovoltaics

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“…Numerical simulations with SCAPS-1D yields good agreement between the simulation results and experimental data, and hence, it is a superior solar cell simulator. 39 The AC and DC PV parameters such as FF, Voc, PCE, and Jsc were simulated under light conditions and different working temperatures. The characteristic parameters of the simulated device are extracted from J-V curves, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Computational Simulation of a Highly Efficient Hole Transport-Free Dye-Sensitized Solar Cell Based on Titanium Oxide (TiO2) and Zinc Oxysulfide (ZnOS) Electron Transport Layers

Korir

Kibet

Ngari

2021

J. Electron. Mater.

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In order to mitigate the current global energy and environmental challenges associated with the use of fossil fuels, there is a need for better energy alternatives such as the inexhaustible solar energy. Of great interest is the design and fabrication of low-cost photovoltaic devices which are the epitome of efficient solar energy harvesting. Herein, we report inexpensive hole transport layer (HTL)-free dye-sensitized solar cell architecture with robust photovoltaic (PV) performance. In the proposed solar cell model, expensive hole transport layers, CuI, CuSCN, Spiro-OMeTAD, and PEDOT:PSS, are not required, but instead, a metallic layer is used for dye regeneration. A thorough analysis of the effect of series and shunt resistances, conduction band offset, Schottky barriers, working temperature, the metal work function of the back contact, and the electron affinities of the electron transport layers (ETLs) on the performance of the proposed solar cell is presented. The Solar Capacitance Simulator (SCAPS-1D) is used to perform the numerical simulations of the proposed solar cell design. The study focused on modeling HTL-free dye-sensitized solar cells with the configuration: FTO/ETL/N719 dye/Au. The performance of two ETLs-ZnOS and TiO 2 are critically examined. The optimized model cell performance for the FTO/ZnOS/N719 dye/Au architecture gave an optimal power conversion efficiency (PCE) of 11.54%, 62.71% as the fill factor (FF), short circuit current (Jsc) of 18.50 mAcm −2 , and an open-circuit voltage (Voc) of 0.99 V. On the other hand, the cell architecture FTO/TiO 2 / N719 dye/Au gave an optimized performance of 10.22% as the PCE, 63.58% as the FF, a Voc of 0.97 V, and 16.50 mAcm −2 as the Jsc. Based on these results, ZnOS is a suitable ETL material that has better PV performance of the solar cell device under consideration. ZnOS is earth-abundant, has a tunable band gap, is less toxic, and is, therefore, a promising candidate to replace TiO 2 ETL in future designs and manufacture of HTL-free DSSCs for commercial production.

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“…However, an optimal MoSe 2 layer thickness is required since a very thick MoSe 2 limits the current collecting ability of the back electrode due to the high resistivity of MoSe 2 (10 1 -10 4 Ωcm) and hence deteriorating the electrical parameters [49] [50]. An optimization of the MoSe 2 layer thickness is therefore required to give it its role as an electron reflector.…”

Section: Mo/cigs Interface Optimizationmentioning

confidence: 99%

Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se<SUB>2</SUB> Based Solar Cells

Ouédraogo¹,

Kébré²,

Ngoupo³

et al. 2020

AMPC

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In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 10 16 cm −3 and the defect density less than 10 14 cm −3. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe 2 layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm 2 in the current density (J sc) depending on the absorber thickness is obtained.

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Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell

Cited by 75 publications

References 46 publications

Rear interface engineering of kesterite Cu₂ZnSnSe₄ solar cells by adding CuGaSe₂ thin layers

Rear interface engineering of kesterite Cu₂ZnSnSe₄ solar cells by adding CuGaSe₂ thin layers

Computational Simulation of a Highly Efficient Hole Transport-Free Dye-Sensitized Solar Cell Based on Titanium Oxide (TiO2) and Zinc Oxysulfide (ZnOS) Electron Transport Layers

Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se<SUB>2</SUB> Based Solar Cells

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Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell

Cited by 75 publications

References 46 publications

Rear interface engineering of kesterite Cu2ZnSnSe4 solar cells by adding CuGaSe2 thin layers

Rear interface engineering of kesterite Cu2ZnSnSe4 solar cells by adding CuGaSe2 thin layers

Computational Simulation of a Highly Efficient Hole Transport-Free Dye-Sensitized Solar Cell Based on Titanium Oxide (TiO2) and Zinc Oxysulfide (ZnOS) Electron Transport Layers

Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se&lt;SUB&gt;2&lt;/SUB&gt; Based Solar Cells

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Rear interface engineering of kesterite Cu₂ZnSnSe₄ solar cells by adding CuGaSe₂ thin layers

Rear interface engineering of kesterite Cu₂ZnSnSe₄ solar cells by adding CuGaSe₂ thin layers

Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se<SUB>2</SUB> Based Solar Cells