Comparison of the temperature dependence of the mechanical dissipation in thin films of Ta
 2
 O
 5
 and Ta
 2
 O
 5
 doped with TiO
 2

Martin, I. W.; Chalkley, E.; Nawrodt, R.; Armandula, H.; Bassiri, R.; Comtet, C.; Fejer, M. M.; Gretarsson, A. M.; Harry, G. M.; Heinert, D.; Hough, J.; MacLaren, Ian; Michel, C.; Montorio, J.-L.; Morgado, N.; Penn, S.; Reid, S.; Route, R.; Rowan, S.; Schwarz, Cornelia; Seidel, P.; Vodel, W.; Woodcraft, A.

doi:10.1088/0264-9381/26/15/155012

Cited by 56 publications

(46 citation statements)

References 32 publications

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“…Nevertheless, since only stacks of dielectric layers were deposited, the combined losses can be estimated as follows: . This value is much lower than data already reported, mainly close to a few 10 −4 , for room temperature [21,22,41,44,45] as well as for low temperature [23,44,46]. Although tantala losses dominate in all these results, operating frequencies are typically lower than a few kHz that is significantly lower than a few tens of MHz as demonstrated in the present work.…”

Section: Discussionsupporting

confidence: 46%

A new method of probing mechanical losses of coatings at cryogenic temperatures

Galliou

Deléglise

Goryachev

et al. 2016

Review of Scientific Instruments

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A new method of probing mechanical losses and comparing the corresponding deposition processes of metallic and dielectric coatings in 1-100 MHz frequency range and cryogenic temperatures is presented. The method is based on the use of extremely high-quality quartz acoustic cavities whose internal losses are orders of magnitude lower than any available coatings nowadays. The approach is demonstrated for Chromium, Chromium/Gold and a multilayer tantala/silica coatings. The Ta2O5/SiO2 coating has been found to exhibit a loss angle lower than 1.6 × 10 −5 near 30 MHz at 4 K. The results are compared to the previous measurements.

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Section: Discussionsupporting

confidence: 46%

A new method of probing mechanical losses of coatings at cryogenic temperatures

Galliou

Deléglise

Goryachev

et al. 2016

Review of Scientific Instruments

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“…In addition, low coating thermal noise is necessary, which can be achieved by reducing coating mechanical loss, reducing coating thickness or by utilizing larger beam sizes on the detector mirrors [14]. Currently, the 2nd generation detectors use coating stacks consisting of alternating layers of silica (SiO 2 ) and tantala (Ta 2 O 5 ), but both materials show increasing mechanical loss when being cooled to low * iain.martin@glasgow.ac.uk temperatures [12,13]. To achieve the ET requirements, coating thermal noise has to be further reduced by reducing the mechanical loss and/or the thickness of the coating.…”

Section: Introductionmentioning

confidence: 99%

Optical absorption of ion-beam sputtered amorphous silicon coatings

et al. 2016

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Low mechanical loss at low temperatures and a high index of refraction should make silicon optimally suited for thermal noise reduction in highly-reflective mirror coatings for gravitational wave detectors. However, due to high optical absorption, amorphous silicon (aSi) is unsuitable for being used as a direct high-index coating material to replace tantala. A possible solution is a multimaterial design, which enables exploitation of the excellent mechanical properties of aSi in the lower coating layers. The possible number of aSi layers increases with absorption reduction. In this work, the optimum heat treatment temperature of aSi deposited via ion-beam sputtering was investigated and found to be 450 • C. For this temperature, the absorption after deposition of a single layer of aSi at 1064 nm and 1550 nm was reduced by more than 80 %.

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“…It has also been shown that the loss of tantala is temperature dependent [8], and that the temperature dependence of the loss in pure and titania doped tantala coatings is strongly dependent on post-deposition heat-treatment, with several lowtemperature mechanical loss peaks emerging as the heat-treatment temperature is increased [8,9].…”

Section: Introductionmentioning

confidence: 99%

Correlations between the mechanical loss and atomic structure of amorphous TiO2-doped Ta2O5 coatings

Bassiri¹,

Evans²,

Borisenko³

et al. 2013

Acta Materialia

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can drop by as much as 40 % when it is doped with TiO 2 . We use a combination of electron diffraction data and atomic modeling using molecular dynamics to probe the atomic structure of these coatings, and examine the correlations between changes in the atomic structure and changes in the mechanical loss of these coatings. Our results show the first correlation between changes in the mechanical loss and experimentally measured changes in the atomic structure resulting from variations in the level of TiO 2 doping in TiO 2 doped Ta 2 O 5 coatings, in that increased homogeneity at the nearest neighbour level appears to correlate with reduced mechanical loss. It is demonstrated that subtle but measurable changes in the nearest neighbour homogeneity in an amorphous material

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Comparison of the temperature dependence of the mechanical dissipation in thin films of Ta ₂ O ₅ and Ta ₂ O ₅ doped with TiO ₂

Cited by 56 publications

References 32 publications

A new method of probing mechanical losses of coatings at cryogenic temperatures

A new method of probing mechanical losses of coatings at cryogenic temperatures

Optical absorption of ion-beam sputtered amorphous silicon coatings

Correlations between the mechanical loss and atomic structure of amorphous TiO2-doped Ta2O5 coatings

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Comparison of the temperature dependence of the mechanical dissipation in thin films of Ta 2 O 5 and Ta 2 O 5 doped with TiO 2

Cited by 56 publications

References 32 publications

A new method of probing mechanical losses of coatings at cryogenic temperatures

A new method of probing mechanical losses of coatings at cryogenic temperatures

Optical absorption of ion-beam sputtered amorphous silicon coatings

Correlations between the mechanical loss and atomic structure of amorphous TiO2-doped Ta2O5 coatings

Contact Info

Product

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Comparison of the temperature dependence of the mechanical dissipation in thin films of Ta ₂ O ₅ and Ta ₂ O ₅ doped with TiO ₂