Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth

Zhang, Lei; Shao, Yongliang; Wu, Yongzhong; Qu, Shuang; Chen, Xiufang; Xu, Xiangang

doi:10.1016/j.jcrysgro.2011.08.035

Cited by 23 publications

(26 citation statements)

References 30 publications

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“…This in-plane compressive stress in the GaN film of sample B (0.34 GPa) grown on MGcS template by MBE is found to be considerably reduced from a previously reported stress value in GaN film grown on MOCVD-GaN/c-Al 2 O 3 template by the HVPE method. 27 In summary, we illustrated the epitaxial growth of crystalline GaN films on MGcS templates by using PAMBE at varied growth temperatures. The growth temperature was optimized for growing stress-relaxed and relatively defect-free homoepitaxial GaN films which were assessed by various ex-situ characterization techniques.…”

Section: ■ Results and Discussionmentioning

confidence: 98%

Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Aggarwal

Krishna

Goswami³

et al. 2015

Crystal Growth & Design

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We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on a metal−organic chemical vapor deposition-GaN/c-sapphire (MGcS) template by using plasma-assisted molecular beam epitaxy and demonstrated the impact of growth temperature on their structural, morphological, and optical properties. An in-plane compressive stress having a minimum value of 0.34 GPa has been investigated by vibrational spectroscopy. This alleviated stress was attributed to a less pitted and smoother surface morphology along with reduced threading dislocation densities. Moreover, photoluminescence measurements explicate reduced yellow band emissions relative to near-band edge emission for the film grown under optimum growth conditions. The stress-relaxed and defect-free crystalline GaN film can further be utilized for tremendous optoelectronic and photonic based applications.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 98%

Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Aggarwal

Krishna

Goswami³

et al. 2015

Crystal Growth & Design

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“…In order to study the influence of stress in GaN crystals grown by HVPE on MGS substrates, the GaN growth process was in all cases carried out at the same growth temperature, Ga-pane growth surface, and gas flow rate. Both growth conditions A and B were used to grow GaN on a MGA substrate, and mirror-like smooth GaN films were obtained 19 30 . The stress condition in GaN grown on a MGA substrate is compressive in nature 19 , while on a MGS substrate it is tensile in nature.…”

Section: Resultsmentioning

confidence: 99%

“…The strain variations were microscopically identified using Z scan Raman spectroscopy. The Raman peak (E 2 ) shift indicates that the stress increased gradually as a function of increase in measurement depth 19 . The reported references mainly focused on the microstructures or defects of GaN films on a SiC substrate and the characteristics of GaN/6H-SiC p-n heterojunctions or heterodiodes grown by MBE or MOCVD.…”

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confidence: 99%

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

Zhang

Hao

et al. 2014

Sci Rep

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GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress.

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“…In order to improve the crystal quality of GaN film, SiC is considered to be promising substrate material because of small lattice match (3.4%) and similar thermal expansion coefficient. GaN grown on SiC instead of sapphire has better crystal quality and smaller residual stress 8 . Several papers about the direct growth of GaN layers on Si- face SiC substrates by HVPE 9 have been reported.…”

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confidence: 99%

Direct growth of freestanding GaN on C-face SiC by HVPE

Tian

Shao

et al. 2015

Sci Rep

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In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

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Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth

Cited by 23 publications

References 30 publications

Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

Direct growth of freestanding GaN on C-face SiC by HVPE

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