Comparison of the sputtered TiO<sub>2</sub> anatase and rutile thin films as electron transporting layers in perovskite solar cells

Shahvaranfard, Fahimeh; Li, Ning; Hosseinpour, Saman; Hejazi, Seyedsina; Zhang, Kaicheng; Altomare, Marco; Schmuki, Patrik; Brabec, Christoph J.

doi:10.1002/nano.202100306

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…Yet another application of TiO 2 and Cu x O can be found in the context of perovskite solar cells [ 50 , 51 , 52 , 53 , 54 , 55 , 56 ]. TiO 2 is used as an electron transport layer (ETL), while Cu x O is used as a hole transport layer (HTL).…”

Section: Introductionmentioning

confidence: 99%

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Wisz,

Sawicka-Chudy,

Sibiński

et al. 2023

Materials

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According to increasing demand for energy, PV cells seem to be one of the best answers for human needs. Considering features such as availability, low production costs, high stability, etc., metal oxide semiconductors (MOS) are a focus of attention for many scientists. Amongst MOS, TiO2 and CuxO seem to be promising materials for obtaining an effective photoconversion effect. In this paper, specific investigation, aimed at the manufacturing of the complete photovoltaic structure based on this concept is described in detail. A set of samples manufactured by DC magnetron sputtering, with various process parameters, is characterized by morphology comparison, layer structure and material composition investigation, and finally by the obtained photovoltaic parameters. Based on SEM studies, it was established that the films are deposited uniformly and complete their formation; without clearly defined faces, the conglomerates of the film grow individually. These are areas with a uniform structure and orientation of atoms. The sizes of conglomerates are in a normal direction range from 20 to 530 nm and increase with film thickness. The film thickness was in the range from 318 to 1654 nm, respectively. The I-V study confirms the photovoltaic behavior of thin film solar cells. The open-circuit voltage (Voc) and short-circuit current density (Jsc) values of the photovoltaic devices ranged from 1.5 to 300 mV and from 0.45 to 7.26 µA/cm3, respectively, which corresponds to the maximum efficiency at the level of 0.01%. Specific analysis of the junction operation on the basis of characteristics flow, Rs, and Rsh values is delivered.

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