Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields

Vizman, Daniel; Friеdrich, J.; Müller, G.

doi:10.1016/s0022-0248(01)01347-1

Cited by 59 publications

(55 citation statements)

References 9 publications

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“…[45] Dabei lassen sich durch supraleitende Magnete mit CuspGeometrie Felder bis zu 3000 G am Tiegelrand erzeugen, deren Feldstärke an der Wachstumsfront praktisch null beträgt. [46] …”

Section: Angewandte Chemieunclassified

“…Die Kurve für M zeigt hier scharfe periodische Signale, die deutlich machen, dass das Cusp-Magnetfeld turbulente aperiodische Fluktuationen unterdrückt. [45] Die periodischen Oszillationen werden durch konvektive Instabilitäten bewirkt, [49] wenn in rotierenden Flüssigkeiten dominante, vertikale Temperaturgradienten auftreten. [50] Schaltet man das Cusp-Magnetfeld aus (Ha = 0), so verlieren die Oszillationen im beschriebenen Modell ihre Periodizität.…”

Section: Numerische Simulation Des Kristallziehensunclassified

“…Bei Z (Abbildung 11, oben) liegt Ein Cusp-Magnetfeld wirkt sich auch sehr güns-tig auf die Temperaturverteilung in der Siliciumschmelze und an der Grenzfläche zum CZ-Siliciumeinkristall aus. [45] [45] Um eine bessere Vorstellung von der Temperaturverteilung zu erhalten, kann man die normalisierten Isothermen ausgehend von der Schmelztemperatur von Silicium wieder in Temperaturwerte umrechnen. [51] Die Übereinstimmung zwischen Experiment und Simulation ist recht gut: Ohne Magnetfeld ist die Differenz zwischen Abbildung 11.…”

Section: Numerische Simulation Des Kristallziehensunclassified

“…Normalisierte Temperaturverteilung einer 20-kg-Siliciumschmelze beim CZVerfahren. [45] Links: gemessene Werte, rechts: berechnete Werte. a) ohne Magnetfeld, b) mit Cusp-Magnetfeld (400 G).…”

Section: Numerische Simulation Des Kristallziehensunclassified

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Czochralskis schöpferischer Fehlgriff: ein Meilenstein auf dem Weg in die Gigabit‐Ära

et al. 2003

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“…[45] Dabei lassen sich durch supraleitende Magnete mit CuspGeometrie Felder bis zu 3000 G am Tiegelrand erzeugen, deren Feldstärke an der Wachstumsfront praktisch null beträgt. [46] …”

Section: Angewandte Chemieunclassified

Section: Numerische Simulation Des Kristallziehensunclassified

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Czochralskis schöpferischer Fehlgriff: ein Meilenstein auf dem Weg in die Gigabit‐Ära

et al. 2003

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“…• Flow control: avoiding time-dependent flows without reducing the mass transport or generating radial segregation. Most methods are based on magnetic fields [14][15][16], but other tools, like double crucibles [17] or axial vibrations [17,18], are also under investigation.…”

Section: Introductionmentioning

confidence: 99%

Czochralski growth of doped germanium with an applied rotating magnetic field

Dold¹

2003

Cryst. Res. Technol.

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The influence of time-dependent buoyancy convection on the temperature field and the microsegregation during the Czochralski growth of doped germanium was investigated. For physical modelling, experiments with gallium melts have been carried out in the temperature range of 690 to 1000 °C. Growth experiments were performed in a 2 inch crucible. Temperature measurements in the melt revealed convective temperature fluctuations in the range of 1.5 K with a standard deviation of σ=0.3 K. The corresponding frequencies are f≤0.6 Hz. The facility was equipped with a rotating magnetic field (RMF) of B max =0.8 mT, adjustable in the range of 5 to 400 Hz. When the maximum field strength was applied, a uniform, azimuthal flow was induced and the germanium melt rotates with 60 rpm. The melt rotation generated by the RMF can completely replace crystal and/or crucible rotation. Growth under an applied RMF results in the lowest microsegregation, compared to the growth without magnetic field / without rotation or to the case when the crystal was rotated but no magnetic field was applied. Increasing the magnetic field strength continuously, the convective temperature fluctuations pass through an intermediated state, where their amplitude becomes even higher, before they are effectively reduced by the RMF. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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Czochralski's Creative Mistake: A Milestone on the Way to the Gigabit Era

Evers¹,

Klüfers²,

Staudigl³

et al. 2003

Angew Chem Int Ed

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Much of the rapid change in industry, science, and society is brought about by the meteoric development of the microelectronics industry. Daily life is affected by this development; one has only to think of mobile telephones and the chips on modern credit cards. The raw material for microelectronics is the single crystal of silicon, with very high purity and almost perfect crystal structure. About 95% of the world's current production of silicon single crystals is achieved using the process that Jan Czochralski discovered in 1916. Today, single crystals of silicon can be grown that are up to 2 m long, 300 mm in diameter, and weigh up to 265 kg. The use of magnetic fields has led to significant advances in crystal-drawing technology. Intensive research and development reveals that in addition to the technology, which provides crystals of ever-increasing diameter, defect engineering, and the control of the numerous temperature-dependent reactions of crystal defects, are of paramount importance.

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Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields

Cited by 59 publications

References 9 publications

Czochralskis schöpferischer Fehlgriff: ein Meilenstein auf dem Weg in die Gigabit‐Ära

Czochralskis schöpferischer Fehlgriff: ein Meilenstein auf dem Weg in die Gigabit‐Ära

Czochralski growth of doped germanium with an applied rotating magnetic field

Czochralski's Creative Mistake: A Milestone on the Way to the Gigabit Era

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