2000
DOI: 10.1116/1.591475
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Comparison of the potential fluctuations in a-Si:H measured by the optical and transport methods

Abstract: Articles you may be interested inEffect of Ga doping on charge transport mechanism of La 0.85 Zr 0.15 Mn 1 − x Ga x O 3 J. Appl. Phys. 105, 07D723 (2009); 10.1063/1.3073950 Doping of spray-pyrolyzed ZnO thin films through direct diffusion of indium: Structural optical and electrical studies J. Appl. Phys. 98, 023509 (2005); 10.1063/1.1985967 Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry Reson… Show more

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Cited by 11 publications
(19 citation statements)
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“…Optical absorption was also measured in the same samples of doped a-Si:H [1]. The data for the absorption coefficient α can well be fitted by the Urbach formula 0 0…”
Section: Introductionmentioning
confidence: 96%
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“…Optical absorption was also measured in the same samples of doped a-Si:H [1]. The data for the absorption coefficient α can well be fitted by the Urbach formula 0 0…”
Section: Introductionmentioning
confidence: 96%
“…Recently a comprehensive experimental study of transport phenomena and of the optical absorption in hydrogenated doped amorphous silicon (a-Si:H) was carried out [1]. The results were interpreted in the framework of the theories exploiting random potential fluctuations caused by the random spatial distribution of impurity atoms in the host semiconductor matrix.…”
Section: Introductionmentioning
confidence: 99%
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“…None the less, measuring conductivity and thermo power and the monitoring of the slope E Q of the function Q may help in estimating them qualitatively. Further, the measurement of α CPM and α PDS and treating them as the optical analogues of transport (σ and S) might give more insight [52]. But the theory has been worked out only qualitatively [53].…”
mentioning
confidence: 98%