Comparison of the picosecond characteristics of silicon and silicon-on-sapphire metal-semiconductor-metal photodiodes

Wang, Chia‐Chi; Alexandrou, Sotiris; Jacobs‐Perkins, D.; Hsiang, Thomas Y.

doi:10.1063/1.111203

Cited by 27 publications

(7 citation statements)

References 11 publications

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“…Changing to A = 725 nm, the pulse rise time is unchanged, but the decay is further slowed because the red light penetrates > 5 yu.m into the Si and carriers diffuse from the depth up to the electrodes for a time as long as 50 ps. 12 For the very thin, active, absorbing Si layers, the use of an additional backside reflector enhances the responsivity greatly. In this depth, the electrical fields are very low (see Figure 3).…”

Section: Ion Implantationmentioning

confidence: 99%

Silicon-Based Metal-Semiconductor-Metal Detectors

Buchal¹,

Loken²

1998

MRS Bull.

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IntroductionPhotodetectors must provide fast and efficient conversion of photons to charge carriers. When considering semiconductor light sources, the indirect bandgap of silicon and germanium represents a serious obstacle to radiative electron-hole recombinations. Momentum conservation demands the simultaneous interaction of the electron-hole pair with a momentummatching phonon. As a consequence, radiative recombinations are five orders of magnitude less probable in Si if compared to a direct semiconductor such as GaAs.Although the absorption of a photon and the generation of an electron-hole pair may be considered as the inverse process to emission, photon absorption within indirect semiconductors is a highly probable process if the photon energy is sufficient to bridge the energy gap in a direct process. The resulting electronhole pair is created in an excited state and relaxes sequentially. The ubiquitoussilicon solar cells operate this way. In the visible spectral range, Si photodetectors have demonstrated fast and efficient performance, being readily adapted for optoelectronic applications and being fully compatible to standard-silicon processing schemes.Optical interconnects (optolinks) operating with visible light are easy to install and service because "you see what you do" without infrared (ir) conversion optics. Probably these optolinks are best suited for data transfer within computers or within local computer clusters and between sensors and processors in machines, plants, vehicles, or air-and spacecraft. Silicon-based photodetectors lend themselves directly to these applications. Long-distance optocommunication uses the 1.3-and 1.5-/nm wavelengths. Silicon itself is highly transparent in this regime. To extend the operational range of silicon-

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Section: Ion Implantationmentioning

confidence: 99%

Silicon-Based Metal-Semiconductor-Metal Detectors

Buchal¹,

Loken²

1998

MRS Bull.

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“…A trigger pulse is generated on the mutual rising edge of bias and actuator signals. This triggers the frame grabber to digitize four fields in succession, corresponding to points C, A, D, B 4 in Fig. 8(a).…”

Section: Modulationmentioning

confidence: 99%

“…Alexandrou et al [3] studied dispersion and propagation modes of ultrafast pulses on bent coplanar transmission lines. Wang et al characterized a silicon photodetector having a 5.7-ps full-width at halfmaximum (FWHM) response with 720 nm [4] and measured a single-flux-quantum pulse in a low-temperature superconducting digital circuit [5]. Hegmann et al [6] measured a 1.5-ps photoinduced transient on superconducting YBa C O , attributed to kinetic inductance.…”

Section: Introductionmentioning

confidence: 99%

Subpicosecond imaging system based on electrooptic effect

Jacobs‐Perkins

Currie

Williams³

et al. 1996

IEEE J. Select. Topics Quantum Electron.

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This work presents an ultrafast, interferometric electrooptic sampling system that uses a two-dimensional detector array to image the electric field present on a device. Spatial and temporal resolution are comparable to conventional "point" electrooptic sampling systems, <5 m and <1 ps, respectively. Voltage sensitivity is expected to be 270 mV and may achieve less than 4 mV with sensor cooling and a more effective electrooptic material. A coplanar silicon structure with 10-m feature size would have a field sensitivity of 27 kV/m and 400 V/m, respectively. This compares favorably with the reported sensitivity of 10 5 V/m for prior imagers and 10 V/m for point samplers. Applications for an E-field "imager" include characterization of field distributions in planar passive microwave devices, multiport analog and digital devices, and studying device and materials physics.

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“…A large family of metal-semiconductor-metal (MSM) diodes with the submicrometer finger spacing and width has been developed and commercially implemented. Generally speaking, generation of ultrashort electrical signals using MSM diodes is also material independent and the devices based on Si, 9"3 Si-on-Sapphire, 9 and InP'7 have been demonstrated to generate picosecond and subpicosecond electrical transients. MSM devices, however, often require implementation of advanced nanometer-scale fabrication techniques and they can be very easily electrostatically damaged.…”

Section: Introductionmentioning

confidence: 99%

<title>Ultrafast photoresponse and fabrication of freestanding LT-GaAs photoconductive devices</title>

Zheng

Adam

et al. 2003

SPIE Proceedings

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We report on fabrication and ultrafast photoresponse of novel, freestanding low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) devices. 1-tm-thick, LT-GaAs single-crystal films were grown by molecular beam epitaxy at the temperature range of 200 °C to 250 °C. Next, the films were patterned to the desired device sizes, lifted-off from their host substrates, and placed on predetermined places on either Si02/Si or MgO wafers. Our freestanding LT-GaAs devices consisted of either approximately 2O-jtm by 2O-m PC switches, or 15O-itm by 15O-itm metal-semiconductormetal (MSM) interdigitated structures with Ti/Au fingers patterned directly on top of the LT-GaAs film. For testing purposes, our devices were integrated with Ti/Au coplanar striplines, fabricated directly on S1O2/Si and MgO substrates.The test structures were illuminated with 100-fs-wide optical pulses and their time-resolved photoresponse was measured with an electro-optic sampling system, characterized by 200-fs time resolution and sub-millivolt sensitivity. Using 810-nm optical excitation, we recorded as narrow as 360-fs-wide electrical signals (1.25 THz, 3-dB bandwidth) for PC switches, resulting in 155 fs carrier lifetime in our freestanding LT-GaAs. For both types of devices, the photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Our freestanding photo-switches are robust and very reproducible. They are best suited for applications in hybrid optoelectronic and ultrafast electronic systems, since they can be placed at virtually any point on a test circuit.

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Comparison of the picosecond characteristics of silicon and silicon-on-sapphire metal-semiconductor-metal photodiodes

Cited by 27 publications

References 11 publications

Silicon-Based Metal-Semiconductor-Metal Detectors

Silicon-Based Metal-Semiconductor-Metal Detectors

Subpicosecond imaging system based on electrooptic effect

<title>Ultrafast photoresponse and fabrication of freestanding LT-GaAs photoconductive devices</title>

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