Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Desmaris, Vincent; Rudziński, M.; Rorsman, Niklas; Hageman, P.R.; Larsen, P.K.; Zirath, Herbert; Rödle, Thomas; Jos, H.F.F.

doi:10.1109/ted.2006.880825

Cited by 63 publications

(38 citation statements)

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“…In order to investigate the trapping of electrons in the epistructures and surface, the transient and pulsed I-V performance of the O + -implanted HEMTs were evaluated using a pulsed I-V system (Accent DiVA D225) [17], [19]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The HEMT device experiment consists of the following three pieces: one piece of material 1 with 2 × 50 × 0.6 µm 2 gates defined in the middle of the 4-µm source-drain spacing and two pieces of material 2 with 2 × 50 × 2 µm 2 gates defined in the middle of the 10-µm source-drain spacing. The HEMTs were fabricated using an 0741-3106/$25.00 © 2007 IEEE in-house process described in [17] with the exception of the isolation process. The piece of material 1 and one piece of material 2 were subjected to O + ion implantation with implantation energies of 25, 50, and 75 keV, and the dose is 5 × 10 14 cm −2 for each energy.…”

Section: Methodsmentioning

confidence: 99%

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Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu

Huang

Desmaris

et al. 2007

IEEE Electron Device Lett.

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Abstract-A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag-and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = −4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = −4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.Index Terms-GaN, high electron mobility transistors (HEMTs), implantation, power density, pulsed I-V , transient.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu

Huang

Desmaris

et al. 2007

IEEE Electron Device Lett.

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“…The buffer in GaN HEMTs is commonly doped with a deep acceptor such as iron (Fe), a deep level acceptor-like impurity, to reduce leakage currents and increase breakdown voltage. 4,5 From a growth point of view, one of the disadvantages with iron doping is the memory effect during metalorganic chemical vapor deposition (MOCVD) growth. Once the iron containing gas is removed from the growth zone, iron will still be present on the GaN surface, resulting in a slow decrease in the iron incorporation versus thickness.…”

Section: à3mentioning

confidence: 99%

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Bergsten

Nilsson

et al. 2015

Applied Physics Letters

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The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 1018 cm−3) epitaxial layer closest to the substrate and a lower doped layer (3 × 1016 cm−3) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 1018 cm−3) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

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“…These parasitic effects are serious problems, and there are many experimental works reported on these phenomena (Khan et al, 1994;Daumiller et al, 2001;Ventury et al, 2001;Koley et al, 2003;Mizutani et al, 2003;Koudymov et al, 2003;Meneghesso et al, 2004;Desmaris et al, 2006), but, only a few theoretical works are reported recently (Braga et al, 2004;Meneghesso et al, 2004;Tirado et al, 2007). The literature suggests that the surface properties (surface states) play an important role in these phenomena, but traps in a buffer layer could also affect the characteristics (Binari et al, 2002;Desmaris et al, 2006). It is also shown that the gate lag and current collapse can be reduced by introducing a field plate (Koudymov et al, 2005).…”

Section: Introductionmentioning

confidence: 99%

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Horio¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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This book is planned to publish with an objective to provide a state-of-the-art reference book in the areas of advanced microwave, MM-Wave and THz devices, antennas and systemtechnologies for microwave communication engineers, Scientists and post-graduate students of electrical and electronics engineering, applied physicists. This reference book is a collection of 30 Chapters characterized in 3 parts: Advanced Microwave and MM-wave devices, integrated microwave and MM-wave circuits and Antennas and advanced microwave computer techniques, focusing on simulation, theories and applications. This book provides a comprehensive overview of the components and devices used in microwave and MM-Wave circuits, including microwave transmission lines, resonators, filters, ferrite devices, solid state devices, transistor oscillators and amplifiers, directional couplers, microstripeline components, microwave detectors, mixers, converters and harmonic generators, and microwave solid-state switches, phase shifters and attenuators. Several applications area also discusses here, like consumer, industrial, biomedical, and chemical applications of microwave technology. It also covers microwave instrumentation and measurement, thermodynamics, and applications in navigation and radio communication. How to referenceIn order to correctly reference this scholarly work, feel free to copy and paste the following: 978-953-307-031-5, InTech, Available from: http://www.intechopen.com/books/advanced-microwave-andmillimeter-wave-technologies-semiconductor-devices-circuits-and-systems/analysis-of-parasitic-effects-inaigan-gan-hemts

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Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Cited by 63 publications

References 25 publications

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

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